Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters

Kim, Jae Joon; Ha, Ji Soo; Lee, Jun Young; Raza, Hamid Saeed; Park, Jiwon; Cho, Sung Oh

doi:10.1021/acsami.6b05555

Cited by 20 publications

(11 citation statements)

References 30 publications

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“…Changes of both electronic and optical properties of organic materials under irradiation can be used for high accuracy dosimetry. The shift of organic polymers absorbance or reflectance allows visualizing structural defects due to ionizing radiation [12], and electronic changes can be detected in different device configurations, such as capacitors, diodes and Organic Field-Effect Transistors (OFETs) [13][14][15].…”

Section: Organic Electronics and Their Relevance For Tissue Equivalencesmentioning

confidence: 99%

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Tackling the Problem of Dangerous Radiation Levels with Organic Field-Effect Transistors

Valitova¹,

Zhang²,

Sayago³

2020

Integrated Circuits/Microchips

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Accurate, quantitative measurements of ionizing radiation, commonly employed in medical diagnostic and therapeutic applications are essential prerequisites to minimize exposure risks. Common examples of radiation detectors include ionization chambers, thermoluminescent dosimeters, and various semiconductor detectors. Semiconductor dosimeters such as p/n type silicon diodes and MOSFETs have found widespread adoption due to their high sensitivity and easy processing. A significant limitation of these devices, however, is their lack of tissue equivalence. The high atomic number (relative to soft tissue) of silicon causes these devices to over-respond to photon beams that include a significant low energy component, for example, 1-10 kV, due to an enhanced photoelectric interaction coefficient. Organic field effect transistors (OFETs) are capable of providing tissue equivalent response to ionizing radiation in order to monitor more accurately the risk of exposure in medical treatments. This chapter presents the possibility to use different types of OFETs as ionizing and X-ray radiation dosimeters in medical applications.

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Section: Organic Electronics and Their Relevance For Tissue Equivalencesmentioning

confidence: 99%

“…Kim et al introduced a rubrene semiconductor OFET as a dosimeter to electron beam irradiation [15]. To show that radiation induced charges can be trapped not only in SiO 2 dielectric and Si/SiO 2 interface but also in organic semiconductor, they compared two sets of devices.…”

Section: Dosimetry Based On Organic Field-effect Transistorsmentioning

confidence: 99%

Tackling the Problem of Dangerous Radiation Levels with Organic Field-Effect Transistors

Valitova¹,

Zhang²,

Sayago³

2020

Integrated Circuits/Microchips

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“…Very limited studies are available on EB induced implications on rubrene despite that high energy EB is very useful and non contact tool to modify the characteristics of organic materials. Kim et al have investigated the high energy EB impacts on rubrene based TFT in vacuum and found that n-doping occurred along with change in molecular conjugation system of the crystalline film [93]. They have compared the mobility and threshold voltage in both cases up to dose of 10 7 rad (or 100 kGy): one is by irradiating without semiconductor layer and another with semiconductor layer.…”

Section: Rubrenementioning

confidence: 99%

“…Mobility and b threshold voltage of rubrene thin film transistor as function of EB dose. Blue color implies device irradiated to dielectric and red color implies device irradiated with semiconductor (Reproduced with the permission of Ref [93]…”

mentioning

confidence: 99%

Electron Beam Induced Tailoring of Electrical Characteristics of Organic Semiconductor Films

et al. 2020

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Tailoring the characteristics of organic semiconductors including molecular semiconductor and conducting polymers is the frontline area of research for improving the performance of organic electronic devices. Electron beam treatment has been established as one of the easiest method in comparison to others like chemical doping, thermal processing, ozonolysis, UV and other ionizing radiation treatment, to tune the physico-chemical properties of organic semiconductors. High energy electron beam (EB) generated from an accelerators impinges energy to the material and causes several phenomena including doping, crosslinking, chain degradation, gas evolution, molecular structural modifications, oxidation and unsaturation. Such modifications lead to variation in electrical characteristics and consequently affect the overall device performances. In the present review we have focused on the different interaction processes of EB with organic semiconductors and its implications to tailor the performance of device comprising of it mainly gas sensors, field effect transistors, thermoelectric power generators and radiation dosimeters.

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“…Given that PDA is used as the interface layer in polymer solar cells, the appropriate modification method should be considered to adjust the morphology, structure, and bandgap of PDA, such that it can be better matched with the electrode and active layer material. Electron beam irradiation (EBI) is an important method in polymer modification . When electron beam energy is transferred to the polymer, the polymer molecular structure changes in arrangement, ionization, ion replacement, carbonization, and free radical generation, thereby resulting in chain scission and/or crosslinking.…”

Section: Introductionmentioning

confidence: 99%

Effect of electron beam irradiation on polydopamine and its application in polymer solar cells

2018

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Summary Polydopamine (PDA) films were irradiated by an electron beam linear accelerator at different irradiation doses ranging from 10 to 150 kGy. The irradiated samples were characterized by Fourier transform infrared spectrometry, UV‐Vis, scanning electron microscopy, atomic force microscope, X‐ray diffraction, cyclic voltammetry, electrochemical impedance spectroscopy, and thermogravimetric analysis. Changes in surface morphology, chemical structure, contact angle, frontier orbitals, and bandgap were analyzed. PDA films modified by electron beam irradiation were used in the interface design and control of polymer solar cells. Devices with the structures of ITO/ZnO/PTB7:PC71BM/MoO3/Al and ITO/PDA‐ZnO/PTB7:PC71BM/MoO3/Al were fabricated. The solar cells with a 100‐kGy electron beam‐irradiated PDA film‐modified ZnO electron transport layer had a significantly improved short circuit current density, and its efficiency reached a maximum value. The short circuit current density and power conversion efficiency reached 13.70 mA/cm2 and 3.82%, respectively. Electron beam irradiation is an effective method to modify PDA, which can be used as an interface modifier in polymer solar cells.

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Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters

Cited by 20 publications

References 30 publications

Tackling the Problem of Dangerous Radiation Levels with Organic Field-Effect Transistors

Tackling the Problem of Dangerous Radiation Levels with Organic Field-Effect Transistors

Electron Beam Induced Tailoring of Electrical Characteristics of Organic Semiconductor Films

Effect of electron beam irradiation on polydopamine and its application in polymer solar cells

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