Effect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequencies

Habeenzu, Brilliant; Meyer, W.E.; Stander, Tinus

doi:10.1016/j.microrel.2020.113598

Cited by 3 publications

(3 citation statements)

References 17 publications

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“…In this process, it was possible to relate them to circuit metrics, which, in turn, provided expected performance changes of similar LNAs to designers. SiGe HBTs can degrade due to irradiation traps generated in the EB spacer region, leading to an increase in the junction capacitance [4,37,38]. X-ray irradiation does not necessarily lower transconductance (g m ) [3], but slight deviations from the initial biasing point may lead to smaller g m , degrading the gain and noise performance of a SiGe LNA [4,11,35,36].…”

Section: Performance Degradation and Small-signal Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (NF) were derived for analyzing TID-induced degradations in the circuit-level performance. To study radiation effects in circuits, the SiGe-RF-LNAs fabricated in a commercial 350 nm SiGe technology were exposed to 10-keV X-rays to a total ionizing dose of up to 3 Mrad(SiO2). The TID-induced performance changes of the LNA were modeled by applying degradation to device parameters. In the modeling process, new parameter values after irradiation were estimated based on information in the literature, without direct measurements of SiGe HBTs used in the LNA chip. As a result, the relative contributions of parameters on the circuit metrics were compared, identifying dominant parameters for degradation modeling. For the TID effects on input matching (S11) and NF, the base resistance (RB) and the base-to-emitter capacitance (Cπ) of the input transistor were mostly responsible, whereas the transconductances (gm) played a key role in the output matching (S22) and gain (S21). To validate the proposed approach, it has been applied to a different LNA in the literature and the modeling results predicted the TID-induced degradations within reasonable ranges.

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Section: Performance Degradation and Small-signal Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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“…The radiation experiment was conducted remotely at a secure radiation facility under zero bias. Samples were irradiated with a Strontium Sr-90 electron radiation source of 3.4 GBq radioactivity [23]. The source releases an electron with a peak energy of ≈0.548 MeV (average 210 keV) during the first decay yielding Yttrium-90 and ≈2.26 MeV (average 890 keV), yielding Zirconium-90 [24] during the second decay.…”

Section: 2electron Irradiationmentioning

confidence: 99%

“…The radiation source was placed at a height of 0.4 cm above the DUT, resulting in an approximate dose rate of 200 krad(Si)/hr [23]. The dose rate was verified using GafChromic EBT3 film (Fig 6b ), with a measured uniformity within 10% over the die area.…”

Section: 2electron Irradiationmentioning

confidence: 99%

Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band

Minko

Stander

2020

Microelectronics Reliability

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Semiconductor technologies for the implementation of radiation-resistant VLSI

Zhuravleva

Popova

2022

Modeling of Systems and Processes

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High values of photocurrents associated with instantaneous radiation can cause a transient voltage drop on the power buses, and some circuits are sensitive to currents generated in the element. This can lead to malfunctions ranging from temporary loss of functioning to data loss by memory and even to final damage to the product. The library elements are accessed at several levels of radiation, as for the design of elements, options for special simulation modeling and methods for creating topology. The article discusses the technologies of radiation-resistant ICS, their effectiveness on silicon-on-insulator structures, compared with a similar scheme on bulk silicon with the same design standards. Radiation-resistant semiconductor specialized devices with increased radiation resistance are also considered. Special attention is paid to the technology of implementation of radiation-resistant semiconductor storage devices. In relation to radiation-resistant logic devices, two directions are considered: the use of specialized logic circuits and user-programmable gate arrays.

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Effect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequencies

Cited by 3 publications

References 17 publications

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band

Semiconductor technologies for the implementation of radiation-resistant VLSI

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