Effect of Electrons Trapping/De-Trapping at Si-SiO<sub>2</sub>Interface on Two-State Current in MOS(p) Structure with Ultra-Thin SiO<sub>2</sub>by Anodization

Chen, Tzu‐Yu; Pang, Chin‐Sheng; Hwu, Jenn–Gwo

doi:10.1149/2.025309jss

Cited by 7 publications

(4 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 4(a) also shows that there is an uptick in the release of energy at the 𝑆𝑖𝑂 2 /𝑆𝑖 interface. The formation of defects at such interface introduces electron trap states [68][69][70] , which can contribute to enhance the p-type doping of the 𝑃𝑑𝑆𝑒 2 channel.…”

Section: Resultsmentioning

confidence: 99%

“…Figure 4(a) also shows that there is an uptick in the release of energy at the SiO 2 /Si interface. The formation of defects at such interface introduces electron trap states [72][73][74], which can contribute to enhance the p-type doping of the PdSe 2 channel. The pile-up of negative charge at the SiO 2 /Si during prolonged irradiation exposures acts as an extra negatively-biased gate and right-shift V gs,MIN thus increasing the hole-doping of the channel.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Electron irradiation of multilayer PdSe₂ field effect transistors

et al. 2020

View full text Add to dashboard Cite

Palladium diselenide (𝑃𝑑𝑆𝑒 2 ) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, 𝑃𝑑𝑆𝑒 2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain 𝑃𝑑 leads enable contacts with resistance below 350 𝑘Ω • 𝜇𝑚. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by 10 𝑘𝑒𝑉 electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as 160 𝑒 − /𝑛𝑚 2 dramatically change the transistor behavior demonstrating a high sensitivity of 𝑃𝑑𝑆𝑒 2 to electron irradiation. The sensitivity is lost after few exposures, that is a saturation condition is reached for fluence higher than ∼ 4000 𝑒 − /𝑛𝑚 2 . The damage induced by high electron fluence is irreversible as the device persist in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trapping in slow trap states at the 𝑆𝑖/𝑆𝑖𝑂 2 interface.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Electron irradiation of multilayer PdSe₂ field effect transistors

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Different numbers of trapped electrons are detected after applying various NCVS treatments. 30 Figure 7 shows the 1 MHz fresh C-V curve and the C-V curves after the NCVS treatments with −1 V, −1.5 V, and −2 V for 700 s under the dark condition. Similar to Fig.…”

Section: Resultsmentioning

confidence: 99%

Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO₂Layer

Chen

Hwu

2014

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

The enhancement of the photo sensitivity of Si-based metal-oxide-semiconductor (MOS) tunneling photodiode with an ultra-thin SiO2 layer is demonstrated by a simple bias treatment in this work. It was found that, after applying a negative constant voltage stress (NCVS) treatment onto the device, a few electrons would be trapped in the ultra-thin SiO2 layer, subsequently the trapped electrons led to a large decrement in the inversion dark current at positive bias. As a result, the photo sensitivity of the device at positive voltage was enhanced. Different stressing voltages of the NCVS treatments applied onto the device were utilized to achieve different numbers of trapped electrons. Thus different photo sensitivities of the device were obtained by these different treatments. The device with the trapped electrons of −0.29 pC exhibits a maximum photo sensitivity enhanced factor (31.3 at 1 V) in this experiment.

show abstract

“…17 The phenomenon of DD was dominated by edge fringing field effect in planar MOS devices and the photo-sensitivity is strongly related to the elongated edge perimeter. 18,19 It was also reported that the most excess electrons are generated in the conduction band of silicon by photon excitation. The depletion width at the edge of planar MOS device will shrink immediately so that the capacitance increases accordingly.…”

mentioning

confidence: 99%

Non-Planar Substrate Metal-Oxide-Semiconductor Photo-Capacitance Detectors with Enhanced Deep Depletion Sensitivity at Convex Corner

Tseng

Hwu

2014

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

Non-planar substrate metal-oxide-semiconductor (MOS) photo-capacitance detector with enhanced deep depletion (DD) at convex corner was demonstrated. The expansion-shrinkage mechanism of depletion width due to illumination was adopted. For non-planar substrate MOS devices, the enhanced photo-capacitance sensitivity in deep depletion region is caused by the large variation of depletion width at convex corners. The smaller area device shows lager photo-capacitance sensitivity due to the shorter distance between the edge of illumination and the convex corner. The significant enhanced photo-capacitance variation sensitivity (ΔC/C) of 85.5% was achieved for non-planar MOS device with an EOT of 2.8 nm in the smallest area of 160 × 160 μm2 which respect to that of 7% for planar one under the same illumination intensity of 90 mW/cm2.

show abstract

Effect of Electrons Trapping/De-Trapping at Si-SiO₂Interface on Two-State Current in MOS(p) Structure with Ultra-Thin SiO₂by Anodization

Cited by 7 publications

References 35 publications

Electron irradiation of multilayer PdSe₂ field effect transistors

Electron irradiation of multilayer PdSe₂ field effect transistors

Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO₂Layer

Non-Planar Substrate Metal-Oxide-Semiconductor Photo-Capacitance Detectors with Enhanced Deep Depletion Sensitivity at Convex Corner

Contact Info

Product

Resources

About

Effect of Electrons Trapping/De-Trapping at Si-SiO2Interface on Two-State Current in MOS(p) Structure with Ultra-Thin SiO2by Anodization

Cited by 7 publications

References 35 publications

Electron irradiation of multilayer PdSe2 field effect transistors

Electron irradiation of multilayer PdSe2 field effect transistors

Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2Layer

Non-Planar Substrate Metal-Oxide-Semiconductor Photo-Capacitance Detectors with Enhanced Deep Depletion Sensitivity at Convex Corner

Contact Info

Product

Resources

About

Effect of Electrons Trapping/De-Trapping at Si-SiO₂Interface on Two-State Current in MOS(p) Structure with Ultra-Thin SiO₂by Anodization

Electron irradiation of multilayer PdSe₂ field effect transistors

Electron irradiation of multilayer PdSe₂ field effect transistors

Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO₂Layer