Effect of enhanced C2 growth chemistry on nanodiamond film deposition

Abstract

A route to high-purity nanocrystalline diamond films from C2 dimers and related mechanisms have been investigated by enhancing C2 growth chemistry in Ar-rich microwave plasmas. Efficient C2 production by direct dissociation from acetylene causes the micro- to nanocrystal transition with a low threshold Ar concentration of ∼70% and produces films of ∼20nm grains with a distinct visible-Raman peak of diamond. C2 grows nanodiamond on diamond surfaces but rarely initiates nucleation on foreign surfaces. The phase purity can be improved by increasing the dominance of nanodiamond growth from C2 over nondiamond growth from CHx(x=0–3) and large radicals.

Molecular Dynamics Simulations of the Sticking and Etch Behavior of Various Growth Species of (Ultra)Nanocrystalline Diamond Films

“…[9,13,14] In particular, correlations between the composition of the plasma close to the surface and the resulting film properties were considered. [15,16] As some hydrocarbon species (e.g. C 2 H) cannot be detected by spectroscopic means under standard plasma growth conditions, [9] computer simulations become an invaluable tool to investigate the reaction behavior of these species on an atomic scale.…”

Microstructure and phase transition of biocompatible titanium oxide film on titanium by plasma discharging

“…The O-Ti-2 had a thicker oxide layer than the Ti. The implant biomaterials with thick oxide layers had better biocompatibility [6][7][8][19][20][21]. Oxide films pretreated in H 2 O 2 enhance oxide growth and increase adsorption of plasma proteins [7].…”

“…Even though TiO 2 film can be grown directly on Ti surface by cost-effective techniques, the implant cleaning after chemical treatments and resulting in environment pollution are problems to be solved urgently. Plasma modification is commonly 0925 applied to functionize the biomaterials and materials [14][15][16][17][18][19]. The feasibility of using glow discharge plasma treatments for sterilizing implants has also been demonstrated [13].…”

Wettability of plasma-treated nanocrystalline diamond films

“…By using the Scherrer's equation, the apparent crystal size was calculated to be about 40 nm without nitrogen addition and about 18 nm with nitrogen addition from the full width at half maximum of the diamond {111} peak. The different crystal size is attributed to the different flux of H atoms in two plasmas; a high H flux increases the mean crystal size via abstraction reaction of surface-bonded H, while a low H flux decreases it by a high frequency of renucleation on the surface [14]. It is considered that each grain actually consists of sub-grains of~40 nm without nitrogen addition and~18 nm with nitrogen addition as indicated by XRD.…”