Effect of Excess Component Element during LPE on Electrical Properties of CdTe

Abstract

Epitaxial layers of CdTe from CdC12 solution show n-type conduction and their carrier concentration increases with the increase in the amount of excess Cd added to the solution during growth. The maximum available value is 4.8 X 101~/cm 8. Carrier concentrations of p-type substrates change after growth from that of before growth and they decrease with the increase in the amount of exceess Cd. High temperature defect equilibria have been calculated in which cadmium vacancy, interstitial cadmium, and vacancy-chloi~ine associates are taken into account. Equilibrium constants of formation of those associates have been determined. The carrier concentrations at room temperature have been explained by assuming the precipitation of some fraction of the native defects into neutral clusters during quenching.

In Situ STM Study of CdTe ECALE Bilayers on Gold

“…27 Our results indicate that the Au(111)-(3×3)CdTe structure is not associated with the deposition of bulk Cd. 27 Close inspection of the coverages estimated by AES 26 indicates that the two structures were observed at similar Cd coverages (as one may expect on comparing the previously proposed structure for Au(111)-( 7× 7)R19.1°2 7 and that for the Au(111)-(3×3)CdTe in Figure 8), and it is possible that the Au(111)-( 7× 7)R19.1°s tructure could be observed at slightly less negative deposition potentials. The Au(111)-(3×3)CdTe structure has a coverage of 0.44 ML, compared to 0.43 ML for the Au(111)-( 7× 7)-R19.1°structure; hence one may expect it to occur at more negative potentials.…”

“…[1][2][3][4][5] Such materials are promising candidates for photovoltaic, light-emitting, and various optoelectronic devices. Thin film compound semiconductors have traditionally been prepared by a variety of high-cost vacuumbased production techniques such as metal organic vapor-phase epitaxy (MOVPE), 6 molecular beam epitaxy, 7 and liquid-phase epitaxy. 7 There has recently been interest in the technique of atomic layer epitaxy (ALE), which involves the alternate deposition of the constituent elements by MBE or MOVPE.…”

“…Thin film compound semiconductors have traditionally been prepared by a variety of high-cost vacuumbased production techniques such as metal organic vapor-phase epitaxy (MOVPE), 6 molecular beam epitaxy, 7 and liquid-phase epitaxy. 7 There has recently been interest in the technique of atomic layer epitaxy (ALE), which involves the alternate deposition of the constituent elements by MBE or MOVPE. [8][9][10][11][12][13] The method relies on the sequential deposition of constituent components using surface temperature to ensure specific monolayer adsorption in the absence of multilayer growth.…”

“…The epitaxial growth of structurally well-defined II−VI semiconductor compounds such as CdTe is currently receiving considerable attention. − Such materials are promising candidates for photovoltaic, light-emitting, and various optoelectronic devices. Thin film compound semiconductors have traditionally been prepared by a variety of high-cost vacuum-based production techniques such as metal organic vapor-phase epitaxy (MOVPE), molecular beam epitaxy, and liquid-phase epitaxy . There has recently been interest in the technique of atomic layer epitaxy (ALE), which involves the alternate deposition of the constituent elements by MBE or MOVPE. − The method relies on the sequential deposition of constituent components using surface temperature to ensure specific monolayer adsorption in the absence of multilayer growth.…”

Electrochemical Deposition, Optical Properties, and Photoelectrochemical Behavior of CdTe Films

“…From Eq. [3], [4], and [5] OT~ = k'DcHT~~ [6] (DCHTe02+/8) -{-kk, Ccd_~+e-~Fhe IRT By using Eq. [3], [4], and [6], the total current, i, is given by …”