Effect of excess lead on the structural and electrical characteristics of sol-gel synthesized RuO2/Pb(ZrxTi1−x)O3/RuO2

Bag, Sankar Prasad; Her, Jim-Long; Pan, Tung-Ming

doi:10.1016/j.ceramint.2016.08.173

Cited by 9 publications

(5 citation statements)

References 28 publications

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“…Peak reflections from the film show the presence of an orthorhombic type structure and are in good accord with the JCPDS card no. (98-026-0170), which is the same as previously researched [21][22][23][24]. Figure 3(b) illustrates the fastest-growing crystal structure during the high-temperature annealing crystallization process, which occurs at 450 °C, as well as how this process prevents the growth of other crystal forms.…”

Section: Structure Properties Of Pyz and Pyzt Thin Films And Ceramicsmentioning

confidence: 63%

“…The dielectric and ferroelectric properties of PZT films can be enhanced by doping them with La, Gd, Nd, Nb, and Pr [20][21][22]. Anti-ferroelectric (AFE) bulk ceramics and thin films have received the bulk of research attention [21][22][23][24][25]. On the other hand, PbZrO 3 (PZ) films have an energy storage density of 16.8 Jcm 3 and a 69.2 percent efficiency [15], whilst (PbZrO 3 ) (PZ) and (PbZrO 3 TiO 2 ) (PZT) films have 35.15 J cm −3 and 65.8 percent for (PZ) and 68.25 J cm −3 and 66.6 percent for (PZT) respectively [1].…”

Section: Introductionmentioning

confidence: 99%

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Exploring ferroelectric properties of sol-gel lead zirconate titanate nano-crystalline thin films and ceramics by doping ytterbium for energy-storage application

Ibrahim¹,

El‐Desoky²

2023

Phys. Scr.

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This work has looked at how ytterbium affects the ferroelectric characteristics of sol-gel Yb doped lead zirconate (PYZ) and lead zirconate titanate (PYZT) thin films and ceramics. Lead zirconate Pb(0.9) )-Yb0.01 Zr(0.09 (PYZ) and lead zirconate titanate Pb0.9-Yb0.01-Zr0.045-Ti0.045 (PYZT) doping with ytterbium thin films were prepared on a glass substrate using a sol-gel doctor blade coating technique at low temperature. The structure of the synthesized thin films and ceramic nanocrystals was examined using X-ray diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction (ED). PYZ and PYZT ceramics had 11.8 nm and 30.65 nm respectively, whereas PYZ and PYZT thin films featured nanocrystals that were, respectively, 17.5 nm and 13.87 nm in size. Particle size was determined to be entirely consistent across the TEM and XRD data. Dielectric investigations showed that for ceramic samples as compared to thin film samples, the dielectric constant was dropping. According to hysteresis loop estimates, the energy-storage density and efficiency for thin films and ceramics were average approximately 39.35 J/cm3 and 66.02 percent for (PYZ) and 71.33 J/cm3 and 70.91 percent for (PYZT), respectively. The results showed that the ferroelectric, dielectric, and structural properties of materials affected the ytterbium content. On the other hand, (PYZ) and (PYZT) thin films and ceramics may have prospective use in energy storage devices.

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Section: Structure Properties Of Pyz and Pyzt Thin Films And Ceramicsmentioning

confidence: 63%

Section: Introductionmentioning

confidence: 99%

Exploring ferroelectric properties of sol-gel lead zirconate titanate nano-crystalline thin films and ceramics by doping ytterbium for energy-storage application

Ibrahim¹,

El‐Desoky²

2023

Phys. Scr.

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“…Peak re ections from the lm that are in good agreement with the JCPDS (card no. 01-085-0859), which is the same as previously investigated [23][24][25][26][27],…”

Section: Samples Preparation and Characterizationmentioning

confidence: 95%

“…By comparing the dielectric constant of the samples under study ( lm & bulk), we found that the dielectric constant of the thin lm is 8 times larger than the value of the dielectric constant of the bulk sample for PEZ, also for PEZT. This is due to the higher number of dipoles in the thin lm than in the bulk form [27][28][29][30][31]. The polarization of particles is the greatest contributor to the dielectric constant.…”

Section: Dielectric Propertiesmentioning

confidence: 99%

Erbium-doped (Pb 0.9 −Er 0.01 -Zr 0.09 ) and (Pb 0.9 -Er 0.01 -Zr 0.045 - Ti 0.045 ) nano-crystalline films and nano-rods ceramic synthesis by sol-gel technique for energy-storage application

Ibrahim

El‐Desoky

2022

Preprint

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The development of dielectric constant materials for energy storage applications is in high demand. Lead zirconate and lead zirconate titanate doping with erbium thin films and bulk -based devices with variant dielectric constant were created in this work. Pb(0.9) )-Er0.01 Zr(0.09 (PEZ) and Pb0.9-Er0.01-Zr0.045-Ti0.045 (PEZT) thin films were produced on a glass substrate using a sol-gel doctor blade technique at low temperature. X-ray diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction (ED) were used to examine the structure of the produced nanocrystals. PEZ and PEZT films had nanocrystals that were 9.5 nm and 15 nm in size, respectively, whereas PEZ and PEZT bulk nano-rods had 455 ± 5 nm in length and 45 ± 1 nm in diameter. The TEM and XRD results were found to be completely consistent in terms of particle size. Ferroelectric properties and dielectric characteristics were found to be frequency dependent. Dielectric experiments revealed that the dielectric constant was decreasing for bulk samples as compared to film samples. The residual polarization of the Er-doped PEZ and PEZT films was the highest, reaching 36.25 µC/cm2 and 69.79 µC/cm2, respectively, and the coercive fields were 43kV/cm and 45.43 kV/cm, respectively. On the other hand, PEZ and PEZT bulk samples had residual polarizations of 27.15 µC/cm2 and 37.29 µC/cm2, respectively, while having coercive fields of 32.3 kV/cm and 39.3 kV/cm, respectively. On the other hand, (PEZ) and (PEZT) samples may have potential use in energy storage applications.

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“…Sol-gel synthesis is well adapted for mass production of PZT, but because of Pb loss during the necessary crystallization annealing, 4,5 excess Pb in the precursor solution is required to obtain near-stoichiometric PZT films. 6,7 In turn, excess Pb may change the surface composition, modifying the PZT/electrode interface chemistry and hence the electrical response of the capacitor. For example, it has been shown that the surface phase of PZT with 10% of Pb precursor excess is not pyrochlore or fluorite as previously thought, but ZrO 1.82-1.89 .…”

mentioning

confidence: 99%

Electrical response of Pt/Ru/PbZr0.52Ti0.48O3/Pt capacitor as function of lead precursor excess

Gueye

Rhun

Renault

et al. 2017

Applied Physics Letters

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We investigated the influence of the surface microstructure and chemistry of sol-gel grown PbZr 0.52 Ti 0.48 O 3 (PZT) on the electrical performance of PZT-based metal-insulator-metal (MIM) capacitors as a function of Pb precursor excess. Using surface-sensitive, quantitative X-ray photoelectron spectroscopy and scanning electron microscopy, we confirm the presence of ZrO x surface phase. Low Pb excess gives rise to a discontinuous layer of ZrO x on a (100) textured PZT film with a wide band gap reducing the capacitance of PZT-based MIMs whereas the breakdown field is enhanced. At high Pb excess, the nanostructures disappear while the PZT grain size increases and the film texture becomes (111). Concomitantly, the capacitance density is enhanced by 8.7%, and both the loss tangent and breakdown field are reduced by 20 and 25%, respectively. The role of the low permittivity, dielectric interface layer on capacitance and breakdown is discussed.

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Effect of excess lead on the structural and electrical characteristics of sol-gel synthesized RuO2/Pb(ZrxTi1−x)O3/RuO2

Cited by 9 publications

References 28 publications

Exploring ferroelectric properties of sol-gel lead zirconate titanate nano-crystalline thin films and ceramics by doping ytterbium for energy-storage application

Exploring ferroelectric properties of sol-gel lead zirconate titanate nano-crystalline thin films and ceramics by doping ytterbium for energy-storage application

Erbium-doped (Pb 0.9 −Er 0.01 -Zr 0.09 ) and (Pb 0.9 -Er 0.01 -Zr 0.045 - Ti 0.045 ) nano-crystalline films and nano-rods ceramic synthesis by sol-gel technique for energy-storage application

Electrical response of Pt/Ru/PbZr0.52Ti0.48O3/Pt capacitor as function of lead precursor excess

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