Effect of Extrinsic Impedance and Parasitic Capacitance on Figure of Merit of RF MOSFET

Yeh, Wen–Kuan; Ku, Chao-Ching; Chen, Shuo-Mao; Fang, Yean–Kuen; Chao, Calvin Yi‐Ping

doi:10.1109/ted.2005.855060

Cited by 10 publications

References 16 publications

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An adjustable design with component tolerance for the Real Time Clock of high-end server systems

Chen

Bai

2011

IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society

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The method we described in this paper is an adjustable design method for more environmental temperature tolerance both with considered components tolerance and temperature characteristics of a Real Time Clock (RTC) circuit on a high end server system. The current RTC source is used on server system categories with a crystal unit, SPXO and TCXO, of which crystal unit is usually used to provide a cost benefit. We propose to reduce those factors which may affect the RTC circuit, such as the PCB (Printed Circuit Board) stack-up, the parasitic capacitance of the PCB trace layout, the equivalent capacitance of the chipset and crystal unit, and also the temperature characteristics of a BT section crystal unit. We enumerate major factors and come up with an external load capacitor value to provide the load capacitance which the oscillator circuit actually needs, to make the RTC clock rate more accurate. And we consider the tolerance of the RTC oscillator circuit and the temperature characteristics of a crystal unit in order to obtain larger design tolerance.

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An adjustable design with component tolerance for the Real Time Clock of high-end server systems

Chen

Bai

2011

IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society

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CMOS millimeter-wave layout-dependent parasitic parameters extraction and optimization by full-wave EM method

Zhong

Kang

2012

2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications

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Hot Carrier Degradation and Performance of 65nm RF n-MOSFET

Fakhruddin

Tang

Kuo

et al. 2007

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

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Hot carrier stress (HCS) induces significant degradation on the performance of 65nm RF n-MOSFET with minimum poly length (L poly ). Although the cutoff frequency (F t ) is very high (~212 GHz) for these devices, the high HCS degradation poses a challenge for RF application. Additional effort will be needed to improve the process and/or device to take full advantage of the record n-MOSFET performance.

show abstract

Effect of Extrinsic Impedance and Parasitic Capacitance on Figure of Merit of RF MOSFET

Cited by 10 publications

References 16 publications

An adjustable design with component tolerance for the Real Time Clock of high-end server systems

An adjustable design with component tolerance for the Real Time Clock of high-end server systems

CMOS millimeter-wave layout-dependent parasitic parameters extraction and optimization by full-wave EM method

Hot Carrier Degradation and Performance of 65nm RF n-MOSFET

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