Effect of F and Nb co-doping on structural, electrical and optical properties of spray deposited tin oxide thin films

Wang, Likun; Yu, Jianyuan; Niu, Xiaoyou; Wang, Li; Fu, Ce; Qiu, Rumeng; Yan, Weijing; Zhao, Hongli

doi:10.1016/j.tsf.2018.01.035

Cited by 18 publications

(2 citation statements)

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“…The 'E g ' value of the SnO 2 films obtained is 3.65 eV. The 'E g ' values obtained were in good agreement with the reports that SnO 2 films usually exhibit band gap energy in the range of 3.4 -4.6 eV (2,(26)(27)(28) . Optical band gap of the films can be tuned by suitable doping or annealing (2,11,29) Refractive index of the material influences the film optical characteristics such as transmission spectrum, reflection spectrum etc.…”

Section: Optical Propertiessupporting

confidence: 89%

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Rapid Synthesis of SnO2 Thin Films using Monoethanolamine through Wet Chemical Route

Murali¹,

Arts²,

Remadevi³

2021

IJST

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Objectives: To develop a unique wet chemical process for the rapid synthesis of SnO 2 thin films and hence to study the structural, morphological, optical and electrical properties of the films. Methods/Analysis: Polycrystalline SnO 2 thin films having a thickness in the range of 800-1000 nm with crystallite size less than 5 nm were synthesized within a time of 20 minutes and without the need of post-annealing using SILAR technique. Lattice parameters, c/a ratio, cell volume, dislocation density, refractive index, extinction coefficient and porosity of the SnO 2 thin films were determined. Findings: Films have a coarse and porous surface morphology with very fine pores distributed nearly uniformly on the film surface. The crystallite size and strain developed in the SnO 2 films were computed by the Williamson-Hall technique. Microstrain developed in the films is of the order of 10 -3 . SnO 2 films exhibit nearly 70% transmittance in the visible region. The optical band gap of the SnO 2 films is 3.65 eV. The refractive index of the films varies from 2.05 to 2.30 in the 450-1900 nm wavelength range. SnO 2 films exhibit a resistivity in the order of 10 -1 Ωcm. Novelty: Reports a unique rapid wet chemical process for the direct preparation of crystalline SnO 2 thin films using monoethaolamine at a temperature of 80 0 C. Literature survey reveals that no other method has yielded such type of good quality SnO 2 thin films at this temperature and without post annealing or sintering. First time crystalline SnO 2 films were prepared by a wet chemical process within 20 minutes.

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Section: Optical Propertiessupporting

confidence: 89%

“…Literature study reveals that the film resistivity was reduced by Fluorine doping from 10 − 2 to 10 − 3 Ωcm (4) . The electrical conductivity of the SnO 2 films can be improved by doping with suitable elements like F, Nb, In, Al and Co (7,12,24,28,31) or by annealing (30,37) .…”

Section: Electrical Propertiesmentioning

confidence: 99%