Effect of fabrication parameters on morphological and optical properties of highly doped p-porous silicon

Bragg mirrors porous silicon back reflector for the light trapping in hydrogenated amorphous silicon

“…3, with an increase in current density only an obvious increase in thickness takes place and the porosity was found to be independent of etching time [18]. It was also shown that with rising anodization time, only the layer thickness was increased and the porosity was not changed [18].…”

Fabrication of porous silicon based tunable distributed Bragg reflectors by anodic etching of irradiated silicon

“…Among these, the etching current density is a critical parameter to control the formation of porous silicon [9,10]. This property can influence the electrical and optical properties of porous silicon [11].…”

“…In electrochemical etching, an aqueous HF solution combined with ethyl alcohol is used to etch the silicon [6]. The structural properties such as size, shape of pores, porosity and thickness of porous Si layer critically depend on the etching parameters such as resistivity of the sample, HF concentration in electrolyte, sample orientation, current density and etching time [7,8]. Among these, the etching current density is a critical parameter to control the formation of porous silicon [9,10].…”

Blue luminescent silicon nanoparticles synthesized from free-standing porous silicon layer by ultrasonic treatment

“…It can be prepared by electrochemical/anodic etching of silicon in aqueous HF based solution [31]. Porous silicon can be used as a seed material to grow different types of Si nano structures because it inherently contains a large number of light emitting silicon nanoparticles [32,33]. The structural and optical properties of this seed material can be tuned by changing the layer porosity, morphology and pore size, etc.…”

“…These properties mainly depend on the etching parameters like resistivity of the sample, crystal orientation, composition of electrolyte, applied current density and etching time, etc. [33,34]. The detachment of pSi layer from Si substrate is essential for the fabrication of flexible pSi based devices and the preparation of ultra-small silicon nanoparticles [35].…”