Effect of Fe doping on the crystallization and electrical properties of Na0.5Bi0.5TiO3 thin film

Feng, Chao; Yang, Changhong; Sui, Huiting; Geng, Fangjuan; Han, Ya-jie

doi:10.1016/j.ceramint.2014.10.066

Cited by 24 publications

(7 citation statements)

References 23 publications

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“…It is worth noting that the maximum value of P max was also observed in BNT–BT–0.01BMO films, which can be ascribed to the following three factors. First, the radii of Mn 2+ and Mn 3+ ions differs from that of Ti 4+ ions, thus adequate amount of Mn substitution could enhance the relative ionic displacement and cause a distortion of TiO 6 octahedra, both of which contribute positively towards the improvement of P max of BiMnO 3 ‐doped films . Second, since Mn can prevent the transformation of Ti between different valence states, the proper BiMnO 3 ‐addition could reduce the amount of charged carriers, thereby facilitating domain wall movement after application of a high bias field .…”

Section: Resultsmentioning

confidence: 99%

Reduced leakage current and enhanced piezoelectricity of BNT–BT–BMO thin films

Song

et al. 2019

J Am Ceram Soc

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BiMeO3 (where Me denotes a transition metal) is often used as a chemical modifier to form the Bi0.5Na0.5TiO3‐based solid solutions and to improve the electromechanical properties of the materials. In this study, BiMnO3 was selected as a chemical modifier, and (1 − x)(0.94Bi0.5Na0.5TiO3‐0.06BaTiO3)–xBiMnO3 thin films with x = 0, 0.005, 0.01, and 0.015 were fabricated using the metal organic decomposition method to study the contributions of the third end‐member BiMnO3 to the reduction in the leakage current and the enhancement of the piezoelectric properties of Bi0.5Na0.5TiO3‐BaTiO3 thin films. Thin films with 1 mol% BiMnO3 exhibit a lower leakage current, and a better piezoelectricity and ferroelectricity, whose Smax/Emax, Pmax, 2Ec, and εr are 100.4 pm/V, 48.0 μC/cm2, 54.9 kV/cm, and 942, respectively.

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Section: Resultsmentioning

confidence: 99%

Reduced leakage current and enhanced piezoelectricity of BNT–BT–BMO thin films

Song

et al. 2019

J Am Ceram Soc

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“…The volatilization of Bi and Na and variable valence of Ti are easy to generate oxygen vacancy for BNT-based thin films resulting in a large leakage current. Single mental oxides (MnO 2 [101,102], Fe 2 O 3 [103], etc.) are used to modify BNT films, which would form different defect complexes to compensate charge balance and suppress oxygen vacancy migration.…”

Section: Lead-free Relaxor Ferroelectric Ceramicsmentioning

confidence: 99%

Progress and perspectives in dielectric energy storage ceramics

Zeng

et al. 2021

J Adv Ceram

245

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Dielectric ceramic capacitors, with the advantages of high power density, fast charge-discharge capability, excellent fatigue endurance, and good high temperature stability, have been acknowledged to be promising candidates for solid-state pulse power systems. This review investigates the energy storage performances of linear dielectric, relaxor ferroelectric, and antiferroelectric from the viewpoint of chemical modification, macro/microstructural design, and electrical property optimization. Research progress of ceramic bulks and films for Pb-based and/or Pb-free systems is summarized. Finally, we propose the perspectives on the development of energy storage ceramics for pulse power capacitors in the future.

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“…For example, the leakage current density of NBT film can be decreased by substituting Ti 4 þ with Mn 2 þ ion [11]. Also, the enhanced ferroelectricity with a remanent polarization (P r ) of 20 μC/cm 2 is obtained in Fe-doped NBT film at room temperature [12]. Given the overall satisfactory behavior by doping with low valence ions, it would be of interest to investigate doping Zn ions at Ti-sites to enhance the electrical properties of NBT films.…”

Section: Introductionmentioning

confidence: 95%