Effect of film formation process on residual stress of poly(p-phenylene biphenyltetracarboximide) in thin films

Synthesis and characterization of fully rodlike poly(4,4?-biphenylene pyromellitimide)s with various short side groups

“…Then, the poly(amic acid) precursor solutions were spincoated on the primer-coated wafers and softbaked on a hot plate at 80°C for 1 h. For the soft-baked precursor samples, dynamic residual stress measurements were performed in nitrogen ambient during thermal imidization and subsequent cooling as a function of temperature, using a stress analyzer, which was made in our laboratory. 38 Here, the imidizations were performed by the same imidization protocols that were employed for the preparation of polyimide films, as described above. However, in the cooling step, there was a cooling rate of 1.0 K/min instead of 10.0 K/min.…”

“…And, the positive and negative signs denote the residual stress in the tension mode and that in the compression mode, respectively. For Si (100) wafer, 38,41 biaxial modulus E S /(1 Ϫ S ) is 1.805 ϫ 10 5 MPa.…”

Residual stress evolution of polymethylsilsesquioxane thin films with organic templates

“…The residual stress of a composite film was analyzed using a wafer bending technique [16,17,19]. The curvature of each silicon substrate was measured with and without the composite film using our custom-made stress analyzer [16,17], equipped with a He-Ne laser (λ = 632.8 nm) and a hot stage in dry nitrogen gas atmosphere.…”

“…An interlayered dielectric material in a device is commonly interfaced to itself as well as a number of other materials such as silicon, silicon nitride, silicon oxide, aluminum, copper, chromium, tungsten, capping metals, and ceramic. In general, residual stress at an interface arises from a drastic difference in the physical properties of the interfaced layers (namely, thermal expansion coefficient, Young's modulus, and Poisson's ratio), and is further influenced by thermal history [16][17][18]. The residual stress, associated mainly with thermal mismatches, can be reduced by adjusting the properties of interfaced layers and optimizing the heat-treatment process.…”

“…Si(100) was chosen due to its well-known physical properties and widespread use in the semiconductor industry. Before casting the composite solutions, the substrate wafers were cleaned and their initial curvatures were determined using a customized residual stress analyzer [16,17].…”