Effect of film thickness on the evolution of annealing texture in sputtered copper films

Park, N. J.; Field, David P.; Nowell, Matthew M.; Besser, Paul R.

doi:10.1007/s11664-005-0157-7

Cited by 34 publications

(19 citation statements)

References 19 publications

(20 reference statements)

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“…The development of a strong {111} texture typically observed in FCC metal thin films is thought to be due to the minimization of the surface/interface energies at the free surface and film substrate interface, as for all FCC metals, the close-packed (111) surface has the lowest surface energy [14]. This is illustrated in figure 2.6, where the surface energy was calculated with the broken bond model and the energy of 2.610 J/m² was used [64][65]. In this case the (111) orientation is thought to minimize both the surface and interface energies, which means that the growth of grains with {111} texture is generally favoured over growth of grains with other orientations.…”

Section: Surface/interface Energy Driven Abnormal Grain Growthmentioning

confidence: 99%

Increasing the mean grain size in copper films and features

et al. 2008

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A new grain-growth mode is observed in thick sputtered copper films. This new grain-growth mode, also referred to in this work as super secondary grain growth (SSGG) leads to highly concentric grain growth with grain diameters of many tens of micrometers, and drives the system toward a {100} texture. The appearance, growth dynamics, final grain size, and self-annealing time of this new grain-growth mode strongly depends on the applied bias voltage during deposition of these sputtered films, the film thickness, the post-deposition annealing temperature, and the properties of the copper diffusion barrier layers used in this work. Moreover, a clear rivalry between this new growth mode and the regularly observed secondary grain-growth mode in sputtered copper films was found. The microstructure and texture evolution in these films is explained in terms of surface/interface energy and strain-energy density minimizing driving forces, where the latter seems to be an important driving force for the observed new growth mode. By combining these sputtered copper films with electrochemically deposited (ECD) copper films of different thickness, the SSGG growth mode could also be introduced in ECD copper, but this led to a reduced final SSGG grain size for thicker ECD films. The knowledge about the thin-film level is used to also implement this new growth mode in small copper features by slightly modifying the standard deposition process. It is shown that the SSGG growth mode can be introduced in narrow structures, but optimizations are still necessary to further increase the mean grain size in features.

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Section: Surface/interface Energy Driven Abnormal Grain Growthmentioning

confidence: 99%

Increasing the mean grain size in copper films and features

et al. 2008

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“…he formation of such texture indicated an alignment of the close packed {111} planes with substrate surface. his texture is oten observed in deposited copper ilms and commonly attributed to minimization of surface energy [22,23]. It was also noteworthy that this texture component notably strengthened with annealing temperature [11].…”

Section: Microstructurementioning

confidence: 84%

Microstructural characteristics of electrodeposited damascene copper lines

Konkova¹,

Mironov

et al. 2014

LoM

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he high-resolution electron backscatter difraction technique and transmission electron microscopy were applied to study microstructure in the overburden layer, in upper and bottom parts of as-deposited as well as subsequently annealed nanoscale (100 nm width) copper wires. It was shown that the temperature interval 100 o C-200 o C should be seen as a transition period of microstructure evolution in damascene copper lines.

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“…According to Ref. [44][45][46], the change in the film thickness can lead to changes in structure, which causes changes in the film properties. In this regard, we have synthesized four-layer deposited films with an average thickness of *200 nm and 10-layer deposited films with an average thickness of *450 nm, both with nanorod-like grains (d av.…”

Section: Resultsmentioning

confidence: 99%

The effect of sol–gel preparation conditions on structural characteristics and magnetic properties of M-type barium hexaferrite thin films

Solovyova¹,

Calzada

Belous³

2015

J Sol-Gel Sci Technol

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We have shown the possibility to obtain M-type barium hexaferrite thin films with thickness of *200-450 nm on the surface of dielectric a-Al 2 O 3 substrates with low microwave dielectric loss (tan d * 10 -4 GHz) by a sol-gel method. For the production of high-dense homogeneous thin films of M-type barium hexaferrite (BaFe 12 O 19 , BHF) with nanorod-like grains and a uniform distribution of iron and barium ions, we have studied the synthesis conditions for thermally stable filmforming solutions with high concentrations of barium ions. Films with a c-axis magnetic texture were obtained by spin-coating the former solutions on a-Al 2 O 3 substrates and annealing at temperatures between 473 and 1073 K. The resulting textured M-type BHF films have demonstrated the following magnetic parameters: H c\ = 334 kA/ m, H c|| = 167 kA/m; M s\ = 0.005 emu, M s|| = 0.003 emu for the films' thickness of *200 nm, and H c\ = 360 kA/ m, H c|| = 338 kA/m; M s\ = 0.009 emu, M s|| = 0.007 emu for the films' thickness of *450 nm. These M-type BHF thin films can serve as a promising basis for further development of multilayer microwave resonant elements. Graphical Abstract

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Effect of film thickness on the evolution of annealing texture in sputtered copper films

Cited by 34 publications

References 19 publications

Increasing the mean grain size in copper films and features

Increasing the mean grain size in copper films and features

Microstructural characteristics of electrodeposited damascene copper lines

The effect of sol–gel preparation conditions on structural characteristics and magnetic properties of M-type barium hexaferrite thin films

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