This
report presents the effect of insertion of four different
π bridges, furan, thienothiophene, thiophene, and thiazole,
into a random benzodithiophene (BDT)-fluorinated-thienothiophene (TT-F)
based donor. Starting from a structure of synthesized donor (D)–acceptor
(A) random copolymer with 3:1 ratio, we have designed four D−π–A
systems with four different π bridges. Structural, optoelectronic,
and charge transport/transfer properties of these donors and donor/NDI
(NDI = poly[N,N′-bis(2-hexyldecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)) blends are investigated
using DFT and TD-DFT methodologies. Our results show that the thiazole
based TzP1 oligomer has the deepest HOMO value resulting in the highest
open circuit voltage among all systems. The maximum absorption wavelengths
of π-linked systems are red-shifted compared to the parent molecule.
Rates of charge transfer and charge recombination are the highest
and smallest in case of the thiazole/NDI blend system. In addition,
hole mobilities in thiophene, thienothiophene, and thiazole based
systems are larger than in the parent system. The results indicate
that the thiazole unit among the four π bridge units is the
most suitable for active layer construction.