2014
DOI: 10.1016/j.spmi.2014.02.005
|View full text |Cite
|
Sign up to set email alerts
|

Effect of fluorine doping on the structural, optical and electrical properties of SnO2 thin films prepared by spray ultrasonic

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

5
26
0
1

Year Published

2015
2015
2024
2024

Publication Types

Select...
9

Relationship

1
8

Authors

Journals

citations
Cited by 65 publications
(47 citation statements)
references
References 36 publications
5
26
0
1
Order By: Relevance
“…Several authors used many dopants such as Ag, Al, Ga, Zn, In, Mn, Sb, and Ru in SnO 2 films to improve these properties [11][12][13][14][15][16][17][18]. Among these dopants, Zr can obtain a high quality of films for optoelectronic device applications [19].…”
Section: Introductionmentioning
confidence: 99%
“…Several authors used many dopants such as Ag, Al, Ga, Zn, In, Mn, Sb, and Ru in SnO 2 films to improve these properties [11][12][13][14][15][16][17][18]. Among these dopants, Zr can obtain a high quality of films for optoelectronic device applications [19].…”
Section: Introductionmentioning
confidence: 99%
“…FTO thin films are usually fabricated by spray pyrolysis [32], chemical vapor deposition [33], pulsed laser deposition [34], rf sputtering [35], inkjet printing [36], and sol-gel processes [26,37]. Among these methods, the sol-gel process is cost-effective to better control film uniformity and is capable of large area deposition.…”
Section: Introductionmentioning
confidence: 99%
“…[2][3][4][5][6][7][8][9][10] Because transparent electronics currently receives a considerable amount of attention, developing high-quality p-type TCO materials is critical. SnO 2 features high transmittance in the visible range and can be doped to achieve a p-type conductor.…”
Section: Introductionmentioning
confidence: 99%