Effect of fluorine on metal-insulator-silicon solar cell performance with an low-temperature deposited SiO2 layer

Optical and structural properties of CuO nanofilm: Its diode application

“…The studies made in literature have shown that the barrier height could be either increased or decreased by using an interlayer on the semiconductor substrate [10][11][12][13][14][15][16][17][18]. The new electrical properties of the MS contacts can be promoted by means of the choice of suitable interlayer [10]. For example, Gupta et al [15] have recently reported the effect of temperature on diode parameters of Au/Cu 2 O/p-Si heterojunction.…”

Photoelectrochemical characterization of p-type silicon electrodes covered with tunnelling nitride dielectric films

“…It is worth noting that in the presence of higher trap concentrations, tunnelling is also possible. The conduction mechanism would then take place via the trap-assisted hopping mechanism when there is a thermal excitation of trapped electrons from one isolated trap site to another [23]. Nevertheless, the charge transfer across the silicon nitride is not possible if the dielectric film is too thick or the electric field too weak.…”

Fluorine Passivation of Defects and Interfaces in Crystalline Silicon

“…This work investigates the use of fluorine as an alternative passivating agent for defects in silicon, to replace or complement hydrogenation for solar cell applications. The benefits of fluorine incorporation have been demonstrated in microelectronic applications, primarily for improving the quality of metal–oxide–semiconductor (MOS) structures. − When implanted into gate dielectric stacks, fluorine terminates the dangling bonds at oxide interfaces − and passivates bulk defects such as oxygen vacancies in high dielectric constant materials , and grain boundaries in polycrystalline silicon (poly-Si) layers. , The use of fluorine in solar cell applications − is less common. It has been used in the formation of poly-Si-based hole-selective passivating contacts (poly-Si/SiO x /c-Si), where boron fluoride (BF 2 ), instead of boron, is implanted into the intrinsic a-Si layers to improve the passivation quality. , It is reported that fluorine codoping not only improves the oxide interfaces but also affects the crystallization rate in the amorphous silicon layers and retards boron diffusion during postimplant annealing. − Moreover, Nogay and Stückelberger used fluorinated precursors (boron trifluoride and silicon tetrafluoride) in a plasma-enhanced chemical vapor deposition (PECVD) process to deposit in situ boron-doped amorphous silicon and phosphorus-doped microcrystalline silicon for forming hole-selective and electron-selective contacts and noted the benefits of fluorine incorporation in terms of their electronic performance.…”