2015
DOI: 10.1016/j.mee.2015.04.103
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Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors

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Cited by 5 publications
(3 citation statements)
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“…The resulting  g are plotted in Figure 5( voltage applied to the gate will not significantly affect their occupancy. 22 …”
mentioning
confidence: 99%
“…The resulting  g are plotted in Figure 5( voltage applied to the gate will not significantly affect their occupancy. 22 …”
mentioning
confidence: 99%
“…For example, the light absorption induced electric carriers should be guided efficiently to the metal contacts in solar cells and photodetectors (figure 1), while in the LED the current transport along the mesa sidewalls should be suppressed to increase the radiative recombination in high-quality bulk quantum wells. The defect levels at insulator/semiconductor interfaces change significantly the carrier recombination and generation [101][102][103].…”
Section: Carrier Recombination and Generation At Insulator-semiconduc...mentioning
confidence: 99%
“…In Figure 15, to verify true inversion characteristics of IPA-based HfO x N y , the minority carrier response was investigated based on the extraction of the transition frequency, w m , which is known to be a characteristic of a strong inverted surface for III-V MOS capacitors [62]. It is known that at the transition frequency, the -wdC/ dw and G m /w share the same peak magnitude in the strong inversion gate bias.…”
Section: Characterization Of Ipa-based Ald Hfo 2 On N-and P-type Ingamentioning
confidence: 99%