Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

Abstract

In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, sg, extracted from experimentally measured transition frequencies, xm, using physics based a.c. simulations, demonstrated a reduction in sg with increasing epitaxial doping concentration. The frequency scaled conductance, G/x, in strong inversion allowed the estimation of accurate Cox values for these MOS devices

The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface

“…At the C-V characteristics for frequencies of 1-100 kHz, after annealing under a bias of -1.5 V, a capacitance dip is observed, which is caused by the transition to the depletion mode. The growth of the capacitance with the negative bias voltage for these curves in the absence of inversion in the structure is related to the contribution of the capacitance of the interface states, which is confirmed by the data reported in [3][4][5][6][7][8]. An increase in the annealing temperature to 350 and 400°C almost does not change the shape of the frequency dependences of the C-V characteristics of the Au/SiO 2 /AOL/InGaAs MIS structures.…”

“…The In 0.53 Ga 0.47 As compound is used in production of high-electron-mobility metal-oxide-semiconductor (MOS) transistors [1,2], in which one of the main requirements is the low electronic density of states (D it ) at the insulator/InGaAs interface [3]. At present, such interfaces are mainly formed by ex situ atomic layer deposition of high-κ insulators, e.g., Al 2 O 3 [4,5], HfO 2 [6], Y 2 O 3 [7], and La 2 O 3 [8], among others [3], in combination with various chemical pretreatments of the semiconductor surface and conditions of deposition of insulator layers and their subsequent annealing. The minimum obtained D it values near the band gap center determined by the conduction method are (4-5) × 10 11 eV -1 cm -2 [6][7][8].…”

Определение концентрации донорной примеси в тонких слоях i-InGaAs

“…Для определения и контроля величины N d (распределения N d по глубине) в полупроводниковых пленках с высоколегированным подслоем преимущественно используются емкостные методы: анализируются высокочастотные вольт-фарадные (C−V ) характеристики структур металл−диэлектрик−полупроводник (МДП) в режимах обеднения и инверсии или барьеров Шоттки (контакт металл−полупроводник) при обратных напряжениях смещения. Стандартно N d определяется исходя из величины плато емкости в режиме сильной инверсии или при отрицательных смещениях для МДП-структур [4] или барьеров Шоттки [5] соответственно. C−Vхарактеристики МДП-структур на основе InGaAs анализировались в работах [6][7][8][9][10].…”

Determination of the donor impurity concentration in thin i-InGaAs layers

“…To determine and to monitor the value of N d (N d distribution through depth) in semiconductor films with a highly doped sublayer, the capacitive methods are mainly used: high-frequency voltage-capacitance (C−V ) characteristics of metal−insulator−semiconductor (MIS) structures in depletion and inversion modes or Schottky barriers (metal−semiconductor contact) at reverse bias voltages are analyzed. As a rule, N d is determined based on the value of the capacitance plateau in the strong inversion mode or at negative shifts for MIS-structures [4] or Schottky barriers [5], respectively. C−V -characteristics of MIS structures based on InGaAs were analyzed in papers [6][7][8][9][10].…”