Effect of free surface and gravity on silicon dissolution in germanium melt

Armour, N.; Dost, S.; Lent, B.

doi:10.1016/j.jcrysgro.2006.11.240

Cited by 18 publications

(26 citation statements)

References 8 publications

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“…9. As seen, the comparison of the samples with the free surface to the samples with the surface covered shows that the dissolution heights are higher in the samples with the presence of a free surface, which is the same trend observed in the experiments conducted under no magnetic eld [13]. This means that the application of a static magnetic eld in this experimental system did not have a signicant eect (within the limit of measurement errors) on the contribution of free surface to the dissolution process.…”

Section: Resultssupporting

confidence: 82%

“…The experiments without magnetic eld presented here were performed under the identical conditions of Ref. [13] other than the applied magnetic eld. The trend to higher silicon dissolution in the presence of the magnetic eld is clearly visible.…”

Section: Resultsmentioning

confidence: 99%

“…In previous sections, we have shown that dissolution has been inuenced by ow structure in the germanium melt [13]. The dissolving silicon stabilizes the melt against convection in the conguration where silicon is dissolving into the melt from above (setup C in Fig.…”

Section: Diusion Limited Silicon Dissolution Into Germanium Meltmentioning

confidence: 93%

“…This observation can be attributed to the altered ow structure in the melt. The result indicates that the convection in the germanium melt without the application of magnetic eld [13] was reducing the dissolution rate of silicon. One may then conclude that the benet (or eectiveness) of an applied magnetic eld in a system is related to the ow characteristics of the melt.…”

Section: Remarksmentioning

confidence: 94%

“…We have rst examined the diusion mechanism of silicon in a germanium melt experimentally [13]. Experiments were specically devised to examine the eects of the orientation of crucible (eect of the gravity direction) and also free surface.…”

Section: Dissolution Of Silicon Into Germanium Meltmentioning

confidence: 99%

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Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

Armour

Dost

2013

Acta Phys. Pol. A

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The silicon transport in a silicongermanium melt has been studied to address the issues of melt replenishment and seed production for the Czochralski growth of silicon germanium (SiGe) crystals. The growth of SiGe single crystals by the Czochralski method requires that the melt be replenished with silicon during the growth process due to the rejection of germanium into the melt during solidication. To facilitate the replenishment of the melt, an accurate knowledge of the dissolution rate of silicon into the melt and its transport through the melt is required. To address these issues, a number of experiments have been carried out on the dissolution of silicon into a germanium melt. Liquid phase diusion growth experiments were also conducted for insight into transport and as a possible method for seed crystal production. The experiments encompassed various temperatures, crucible geometries, crucible translation, and magnetic eld levels to determine optimum conditions for the most favorable dissolution rates and mass transport in the melt. Results have shown that replenishment from bottom of the crucible is most eective due to the enhanced silicon transport by buoyancy. The application of magnetic elds may also provide an eective mean to control the replenishment rate (mass transport rate) in the melt.

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Section: Diusion Limited Silicon Dissolution Into Germanium Meltmentioning

confidence: 93%

Section: Remarksmentioning

confidence: 94%

Section: Dissolution Of Silicon Into Germanium Meltmentioning

confidence: 99%

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