Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

Klangtakai, Pawinee; Sanorpim, Sakuntam; Wattanawareekul, Atiwat; Suwanyangyaun, Pattana; Srepusharawoot, Pornjuk; Onabe, Kentaro

doi:10.1016/j.jcrysgro.2015.01.038

Cited by 6 publications

(5 citation statements)

References 27 publications

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“…The surfaces of all irradiated GaAs samples ( Figure 3 ) appear rougher surface with increased electron energy and electron dose, compared to the non-irradiated sample ( Figure 1 b), in agreement with the FIB-SEM result ( Figure 2 ). This observation agrees well with Shen et al’s work [ 37 ] and our previous work [ 49 ]. Their works discovered the irradiated samples had a rougher surface with increasing gamma irradiation dose.…”

Section: Resultssupporting

confidence: 94%

“…The holes appearing on the surface may be due to a melt ability of the electrons’ high energy, which caused some atoms (Ga or As) to escape from the lattice site. This occurrence of a hole on the irradiated surface was observed in our previous work, which was induced by gamma irradiation on the GaAsN surface [ 49 ].…”

Section: Resultssupporting

confidence: 68%

“…Thus, the nature of structural defects in GaAs-based material and its alloy in a high-energy particle environment must be well understood in microscopic and macroscopic views to know for engineering material preparation and optimize the sample structure for practical use. In our previous work [ 49 ], we studied the effect of gamma-ray irradiation on the structural property of GaAs 1− x N x (N content ( x ) = 1.9 and 5.1% with various irradiation doses of 0, 0.5, 1.0, 1.5, and 2.0 MGy. After gamma-ray irradiation, we found that roughened surface with numerous holes and a cross-hatch pattern were observed on the GaAs 1− x N x surface.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

et al. 2022

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A systematic investigation of the changes in structural and optical properties of a semi-insulating GaAs (001) wafer under high-energy electron irradiation is presented in this study. GaAs wafers were exposed to high-energy electron beams under different energies of 10, 15, and 20 MeV for absorbed doses ranging from 0–2.0 MGy. The study showed high-energy electron bombardments caused roughening on the surface of the irradiated GaAs samples. At the maximum delivered energy of 20 MeV electrons, the observed root mean square (RMS) roughness increased from 5.993 (0.0 MGy) to 14.944 nm (2.0 MGy). The increased RMS roughness with radiation doses was consistent with an increased hole size of incident electrons on the GaAs surface from 0.015 (0.5 MGy) to 0.066 nm (2.0 MGy) at 20 MeV electrons. Interestingly, roughness on the surface of irradiated GaAs samples affected an increase in material wettability. The study also observed the changes in bandgap energy of GaAs samples after irradiation with 10, 15, and 20 MeV electrons. The band gap energy was found in the 1.364 to 1.397 eV range, and the observed intense UV-VIS spectra were higher than in non-irradiated samples. The results revealed an increase of light absorption in irradiated GaAs samples to be higher than in original-based samples.

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Section: Resultssupporting

confidence: 94%

Section: Resultssupporting

confidence: 68%

Section: Introductionmentioning

confidence: 99%

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Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

et al. 2022

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“…The phonon modes at 255 cm −1 was also observed by Hashimoto et al [30], Prokofyeva et al [31], Minlairov et al [32], Mascarenhas [33], Coaquira et al [34], Tisch et al [35] and Bharatan et al [37]. The mode at 197 cm −1 was also reported by Yu et al [38], Minlairov [32] and Klangtaka et al [39]. Mascarenhas et al assigned the mode at 255 cm −1 to GaAs TO(X) phonon [33].…”

Section: Resultsmentioning

confidence: 57%

Origin of two special Raman modes in dilute nitrides

Chen

Tang

2020

J. Phys. D: Appl. Phys.

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Two special Raman modes at 197 cm−1 and 255 cm−1 have been observed and discussed for a long time without persuasive conclusion in dilute nitride materials. In this work, using Raman spectroscopy and transmission electron microscopy (TEM), we studied Molecular Beam Epitaxy grown GaAsN/GaAs multiple quantum well samples with nitrogen concentration ranging from 0.6% to 6.1% and undergoing post-growth rapid thermal annealing (RTA) processes in the temperature range of 650 °C–950 °C. We assigned these two modes to the double degeneracy Eg and Ag modes from arsenic crystalline clusters on sample surface according to the Raman measurements and TEM observations. The physical mechanisms involved in the RTA processes at different temperatures were proposed.

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“…They stated that interface states density increased when dilute nitride concentration increased. Researchers (Klangtakai et al, 2015) have also investigated gamma-ray irradiation effects on structural properties of GaAs 1-x N x films (N between 1.9 and 5.1 at%). They found that gamma-ray irradiation causes structural changes including displacement damage and gamma-ray heating.…”

Section: Introductionmentioning

confidence: 99%

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

Teffahi

Hamri

Djeghlouf

et al. 2018

Radiation Physics and Chemistry

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Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90 -290 K temperature range and 50-2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε') shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependent ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200-290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.

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Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

Cited by 6 publications

References 27 publications

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

Origin of two special Raman modes in dilute nitrides

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

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