Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition

Abstract

Indium-rich AlInN are grown by metal-organic(MO) chemical vapor deposition using trimethylaluminum, trimethylindium, and ammonia. Under the conservation of MO influx, the effects of gas flow in the MO route on AlInN growth and Al-related parasitic reaction are investigated. With an increase in this gas flow, the suppression of Al-related parasitic reaction, i.e., enhancement in Al content incorporation and improvement of crystalline quality, is satisfactorily shown until the occurring of severe phase separation. Accordingly, Al content x in AlxIn1−xN can be tuned from x=0.02 to 0.26. The Raman spectra of those AlInN samples with phase separation are analyzed by the resonant excitation effect and two-mode behavior for A1(LO). Finally, we propose a phase diagram to interpret the phase separation and Al content evolution under the influence of gas flow

Built-in field control in alloyedc-plane III-N quantum dots and wells

“…Particularly, the amount of In that can be incorporated into InGaN and AlInN alloys while maintaining high crystal quality is currently for layered structures about 30% in both cases. 4,[57][58][59][60][61] In the case of QDs, higher In contents of up to $ 35% have been reported in InGaN QDs, 62,63 whereas AlInN QDs have not been studied significantly in the literature. Regarding strain, devices with as much as $ 1.1% compressive in-plane strain in the barriers along the whole active layer have been reported.…”

Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications

“…[1][2][3][4] Currently, the research on AlInN, as compared to GaInN, is still at the more initial stage and unique properties are revealed for In-rich AlInN. 5 Unfortunately, the difference in thermal stability between AlN and InN is quite large and phase separations are usually observed in the growth of AlInN by metalorganic chemical vapor deposition (MOCVD), one of the most accurate growth methods, when the In composition is increased over 32%, 6,7 which deteriorate the optical and electrical properties of the ternary alloys. Based on the comparisons made by Yamamoto et al, 1 molecular beam epitaxy (MBE), another accurate crystal growth method, may have advantages in avoiding the phase separations as well as of being able to realize p-type doping in highindium-content AlInN.…”

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

“…This is a highly challenging goal and to our knowledge similar structures have never been tested before. Issues may appear because of the InAlN immiscibility gap, 11) phase separation in growing In-rich InAlN 12,13) and because of relaxation in highly mismatched InAlN/GaN heterostructures. To solve these problems, in the present work we suggest growing quaternary In x Al (1−x−y) Ga y N/GaN QWs where a limited amount of Ga is added to In-rich InAlN.…”