Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

Rumyantsev, Sergey; Pala, Nezih; Shur, M. S.; Gaška, R.; Levinshteǐn, M. E.; Khan, M. Asif; Simin, Grigory; Hu, X.; Yang, J.

doi:10.1063/1.1321790

Cited by 77 publications

(33 citation statements)

References 11 publications

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“…However, GaN-based Schottky interfaces are known to suffer from unusually large leakage currents under reverse bias [1][2][3]. Excess leakage currents through a Schottky gate strongly affects, not only gate-control and power consumption, but also the noise performance in GaN-based FET devices as recently pointed out [4]. In spite of this, there have been only a few reports on the leakage properties of Schottky contacts in the reverse bias region.…”

Section: Introductionmentioning

confidence: 97%

“…Pt, Au and Ag were used for Schottky contacts. Just prior to the vacuum deposition, the GaN surfaces were treated in NH 4 OH solution for 15 min at 50 o C. The detailed XPS analysis revealed that this treatment was very effective in reducing natural oxide components on GaN and AlGaN surfaces [7,8]. I-V measurements were done using HP 4156A semiconductor parameter.…”

Section: Introductionmentioning

confidence: 99%

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Mechanism of current leakage through metal/n-GaN interfaces

Oyama

Hashizume

Hasegawa

2002

Applied Surface Science

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Detailed current-voltage-temperature (I-V-T) measurements were performed on the Schottky diodes fabricated on MOVPE-grown n-GaN layers. A large deviation from the thermionic emission (TE) transport was observed in the reverse I-V curves with a large excess leakage. From the calculation based on the thermionic-field emission (TFE) model, it was found that the tunneling plays an important role in the carrier transport across the GaN Schottky barrier even for doping densities as low as 1 x 10 17 cm -3 . A novel barrier-modified TFE model based on presence of near-surface fixed charges or surface states is proposed to explain the observed large reverse leakage currents.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Mechanism of current leakage through metal/n-GaN interfaces

Oyama

Hashizume

Hasegawa

2002

Applied Surface Science

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“…Hence, the gate leakage current should not contribute much to the output noise in these devices. [6][7][8] …”

Section: A Contribution To Noise From Gate Leakage Currentmentioning

confidence: 99%

Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors

Rumyantsev

Pala

Shur

et al. 2001

Journal of Applied Physics

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Articles you may be interested in Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics and Electronics Manufacturing, CII 9017, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 The low frequency noise in GaN field effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2ϫ10 Ϫ3 to 3ϫ10 Ϫ3 . Temperature dependence of the noise reveals a weak contribution of generation-recombination noise at elevated temperatures.

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“…Large leakage adversely affects operation, power consumption, noise and reliability of devices [3]. Because of this, many papers have tried to explain I-V characteristics with limited success.…”

Section: Introductionmentioning

confidence: 99%

Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model

Kotani

Hasegawa

Hashizume

2004

Applied Surface Science

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This paper attempts a rigorous computer simulation of the current transport in GaN and AlGaN Schottky diodes on the basis of the thin surface barrier (TSB) model recently proposed by the authors' group. First, a computer program was developed which can calculate current transport through an arbitrary potential profile of Schottky barrier by a combined mechanism of thermionic emission (TE), thermionic-field emission (TFE) and field emission (FE). Then, from the view point of the TSB model, attempts were made to fit the theoretical temperature dependent current voltage (I-V-T) curves to the measured I-V-T data taken on Ni/n-GaN and Ni/n-AlGaN Schottky diodes changing the barrier profiles and the energy depth of the surface donor. As compared with the previous poor fitting using approximate analytic formulas, excellent fitting was obtained for both forward and reverse current, confirming the validity of the TSB model as the mechanism for anomalously large leakage currents in GaN and AlGaN Schottky diodes. Best fittings for GaN and Al 0.26 Ga 0.74 N were obtained for exponentially decaying distributions of surface defect donors with the peak density of 5x10 18 cm -3 and 1x10 19 cm -3 , the characteristic decay depth of 11 nm and 11.5nm and the energy depth of 0.25 eV and 0.37eV, respectively.

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Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors

Cited by 77 publications

References 11 publications

Mechanism of current leakage through metal/n-GaN interfaces

Mechanism of current leakage through metal/n-GaN interfaces

Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors

Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model

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