Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model

Kotani, Junji; Hasegawa, Hideki; Hashizume, Tamotsu

doi:10.1016/j.apsusc.2004.06.152

Cited by 11 publications

(6 citation statements)

References 10 publications

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“…A previous study has reported that TFE is the dominant current transport mechanism for the recessed Al-GaN/GaN SBD. [9] Under the forward bias, the current due to TFE is given by [11,12]…”

Section: Resultsmentioning

confidence: 99%

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

et al. 2015

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Influence of dry-etching damage on the electrical properties of anAlGaN/GaN Schottky barrier diode with recessed anode *Zhong Jian(钟健) a) , Yao Yao(姚尧) a) , Zheng Yue(郑越) a) , Yang Fan(杨帆) a) , Ni Yi-Qiang(倪毅强) a) , He Zhi-Yuan(贺致远) a) , Shen Zhen(沈震) a) , Zhou Gui-Lin(周桂林) a) , Zhou De-Qiu(周德秋) a) , Wu Zhi-Sheng(吴志盛) a) , Zhang Bai-Jun(张伯君) b) , and Liu Yang(刘扬) a) †

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“…A previous study has reported that TFE is the dominant current transport mechanism for the recessed Al-GaN/GaN SBD. [9] Under the forward bias, the current due to TFE is given by [11,12]…”

Section: Resultsmentioning

confidence: 99%

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

et al. 2015

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“…A reasonable explanation is that tunneling occurs at a certain energy whose energy position is temperature dependent and this can be formulated by the Fermi-Dirac distribution functions. Then, the tunneling current by electrons from Ti to SiC can be calculated using the following equation [10]: where φ(z) the potential distribution, E z the normal component of the electron energy to the barrier, E p the parallel component of the electron energy, and f s and f m the Fermi-Dirac distribution functions for SiC and metal. A free electron model is used such as E z = ℏ 2 k z 2 /2m * , where k z is the wave number normal to the barrier.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

Okino

Kameshiro

Konishi

et al. 2013

MSF

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The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

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“…This should produce a gradual dc current increase across the NW device as the magnitude of the negative bias increases. 21,22 The defect-assisted tunneling current is proportional to the integral of the tunneling probability, which is not thermally activated. 23 Consistent with this, the current-voltage characteristics for negative bias on the top Pt electrode do not show an exponential increase with applied voltage, unlike the positive bias case.…”

Section: Resultsmentioning

confidence: 99%

Vertical Germanium Nanowire Arrays in Microfluidic Channels for Charged Molecule Detection

Koto

Leu

McIntyre

2009

J. Electrochem. Soc.

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We demonstrate the fabrication of vertical germanium nanowire ͑Ge NW͒ molecular sensor arrays that are suitable for biological field-effect-transistor sensing, using conventional semiconductor fabrication processes. The proposed fabrication process enabled production of freestanding vertical NW arrays with a Schottky junction top contact. The arrays' dc current-voltage characteristics could be modulated by altering the solution pH in contact with the HfO 2 gate insulator-coated nanowire surface. A sensitivity of 50 nS/pH with 1 m 2 sensor area is demonstrated for undoped vertical Ge NW arrays.One-dimensional devices such as semiconductor nanowires ͑NWs͒, have attracted much interest because of their unique characteristics. Previous studies have shown the potential of NWs for interconnects, field-effect transistors ͑FETs͒, 1,2 and sensors. 3 For sensor device applications, several authors have reported on NW-based devices in which a very high sensitivity is obtained by the selective binding of molecules to the wire surface, thus inducing charge transfer and a conductance change in the wire. 1 However, in previous research, NWs were first removed from their host substrate, collected in solution, and finally deposited onto another substrate. Therefore, most NW-based devices reported to date sit horizontally on the substrate. From the fluid dynamics viewpoint of target molecule capture and detection in solution, freestanding FET structures are preferable, as the amount of NW surface exposed to the fluid is increased and the functionalized NW surface region at which molecules bind can be far away from the solution/fluidic channel boundary layer across which molecules must, in the absence of convection or stirring, diffuse to reach the wire surface. 4 In addition, an enhanced electrolyte-insulator-semiconductor capacitance is expected for freestanding, "surround-gate" channel structures. 5 In the present research, we have demonstrated reproducible pH sensing using vertical, freestanding Ge NW devices fabricated within a microfluidic channel on a Si͑111͒ wafer. Furthermore, the Au catalyst particles at the tips of the NWs were removed during the fabrication process, which may improve its adaptation to a conventional semiconductor process. Because of its conventional processes to fabricate the sensor array, the devices can be easily reproduced with a reliable sensing performance. Figure 1 shows an overview of the fabrication process. A lowresistivity silicon substrate served as the common bottom electrode for the NW array sensors. The substrate used in this study was As-doped silicon ͑111͒ with 0.05-0.09 ⍀ cm resistivity. To fabricate microfluidic channels, 140 nm silicon oxide and 860 nm silicon nitride were formed by furnace oxidation and chemical vapor deposition ͑CVD͒, respectively. The silicon dioxide film functioned as an etch stop layer during silicon nitride dry etching and as a buffer layer between the silicon substrate and the relatively higher-stress silicon nitride. The silicon nitride film formed by low-pres...

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Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model

Cited by 11 publications

References 10 publications

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

Vertical Germanium Nanowire Arrays in Microfluidic Channels for Charged Molecule Detection

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