Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

Okino, Hiroyuki; Kameshiro, Norifumi; Konishi, Kumiko; Inada, Naomi; Mochizuki, Kazuhiro; Shima, Akio; Yokoyama, N.; Yamada, R.

doi:10.4028/www.scientific.net/msf.740-742.881

Cited by 10 publications

(7 citation statements)

References 10 publications

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“…As frontside and backside electrodes, titanium and nickel contacts were formed, respectively. Since this study also aims at applying AS-FFR to junction-barrier Schottky diodes [21], the anode contact was non-Ohmic. However, even with such non-Ohmic anode electrode, BV can be precisely determined [22], as shown as an example in Fig.…”

Section: Methodsmentioning

confidence: 99%

Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p–n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring

Mochizuki

Kameshiro

Matsushima

et al. 2015

IEEE J. Electron Devices Soc.

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Conventional floating-field rings, which are used to reduce the peak electric field at the periphery of power devices, cause nonuniform avalanche multiplication when applied to planar junctions formed on 4H-SiC substrates misoriented from (0001) toward [1120]. Accordingly, a novel asymmetrically spaced floating-field ring (AS-FFR) was applied to 4H-SiC 4 • -off (0001) p-n diodes and found to be effective against such nonuniform avalanche multiplication; that is, luminescence at breakdown was nearly uniform when the spacing between the edge of the anode and the inner edge of the AS-FFR was 2.0 μm in the [1 120] direction and 1.5 μm in the [1120] direction. This result should contribute to exploring the possibility of 4H-SiC power devices with higher avalanche ruggedness.INDEX TERMS Aluminum, ion implantation, power semiconductor devices, silicon compounds.

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Section: Methodsmentioning

confidence: 99%

Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p–n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring

Mochizuki

Kameshiro

Matsushima

et al. 2015

IEEE J. Electron Devices Soc.

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“…In order to further reduce the reverse leakage current and the off-state loss of the SiC JBS diode, the trench structure is employed to design JBS diodes (trench JBS diode, T-JBS diode) [12]. The T-JBS diode structure contains a deeper p-type region compared to JBS structure, which can shield the Schottky contact interface from the high electric field effect more significantly, which results in a reduction on the reverse leakage current of the T-JBS diode [13][14][15]. However, the deep p-type region of the T-JBS diode introduces a strong JFET (junction field-effect transistor) effect between the trenches, which narrows the forward current path, resulting in a decrease in the forward current density and an increase in the specific on-resistance (R on,sp ) [16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

A SiC sidewall enhanced trench JBS diode with improved forward performance

Kong

Chen

Gao

et al. 2022

Semicond. Sci. Technol.

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A new high-performance sidewall enhanced trench junction barrier Schottky (SET-JBS) diode is proposed in this article. In the proposed SET-JBS diode, in addition to the Schottky contact on the top anode, the sidewall of the trenches also introduces Schottky contacts, which not only increases the Schottky contact area, but also weakens the JFET (Junction Field-Effect Transistor) effect of the device, resulting in a high forward current density and a low specific on-resistance (R on,sp) with a small increase in reverse leakage current (J L). Simulation results show that the R on,sp of the proposed SET-JBS diode is reduced by 21.6% to 46.7% with less than an order of magnitude increase in leakage current compared with that of the conventional trench JBS (T-JBS) diode when the trench distance is from 2.1μm to 1.2 μm at the 2μm trench depth. And the SET-JBS diode also performs better than the trench MOS barrier Schottky (TMBS) diode when comprehensively considered the R on,sp and J L. And the figure of merit (FOM) and the trade-off relationship between the R on,sp and the breakdown voltage of the proposed SET-JBS both are better than those of the conventional T-JBS diode and TMBS diode. The forward I-V analytical model of the SET-JBS is also proposed, which is in good agreement with the simulation results. All the simulation results indicate that the proposed SET-JBS diode has promising potential in power electronics applications.

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“…3,4) However, SiC SBDs have a significantly larger reverse leakage current than Si PNDs because of tunneling current through the Schottky barrier under high reverse voltage. 5) The amount of reverse leakage current largely depends on the barrier height and electric field. [6][7][8] Furthermore, it is easily affected by the concentration of the electric field owing to some extrinsic properties at the Schottky contact interface, such as crystal defects, metal particles, and interface charges.…”

Section: Introductionmentioning

confidence: 99%

Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes

Konishi¹,

Kameshiro²,

Yokoyama³

et al. 2017

Jpn. J. Appl. Phys.

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We investigated 4H-SiC trench junction barrier Schottky (JBS) diodes from the viewpoints of the tradeoff between the electric field at the Schottky contact interface (Es) and the forward voltage drop, the effect on reduction of reverse leakage current, and the device yield. By calculating Es, we found that the trench JBS structure can make Es one order of magnitude smaller than that of the planar JBS structure, when the bevel angle (θ) is set between 80 and 90°. Moreover, 600 V/50 A trench JBS diodes were fabricated, and their reverse leakage current at 600 V was made 102 times smaller than that of the planar JBS diode by effectively reducing Es. We also found that this reduction in reverse leakage current decreases the number of low breakdown voltage samples below 600 V and improves the yield.

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Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

Cited by 10 publications

References 10 publications

Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p–n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring

Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p–n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring

A SiC sidewall enhanced trench JBS diode with improved forward performance

Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes

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