EFFECT OF GATE OXIDE PROCESSES ON 4H-SiC MOSFETs ON (000-1) ORIENTED SUBSTRATE

Abstract

We have fabricated, characterized and compared the performance of lateral n-channel 4H-SiC MOSFETs on (000-1) oriented substrates, using two different gate oxide processes. These processes include low-temperature deposited oxide and plasma-enhanced CVD oxide. Different MOSFET parameters, such as field-effect mobility, threshold voltage, Hall mobility and inversion sheet carrier concentration has been compared for the two processes.