Effect of gate–source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors

In this study, the ungated AlGaN/GaN devices with special mesa structures were designed. The hypothesis of effective width expansion was tested experimentally by using ungated samples with different sizes, and an empirical expression for calculating the conduction channel effective width was given according to the experimental results. Finally, split-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths were prepared, and the channel electron mobility of split-gate samples was calculated by using the empirical expression and polarization Coulomb field (PCF) scattering theoretical model. The results showed that, for split-gate AlGaN/GaN HFETs, with the increase in the gate length, the total amount of additional polarization charges underneath the gate increases, resulting in the enhancement of the PCF scattering intensity.

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Effect of gate–source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors

Cited by 2 publications

References 19 publications

The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors

The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

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