2017 15th International Conference on Quality in Research (QiR) : International Symposium on Electrical and Computer Engineerin 2017
DOI: 10.1109/qir.2017.8168451
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Effect of Ge mole fraction on current, voltage and electric field characteristics of high doping nanoscale Si<inf>1−x</inf>Ge<inf>x</inf>/Si p-n diode

Anak Agung Ngurah Made Narottama1,
Anak Agung Ngurah Gde Sapteka2
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