We present a fundamental study of
the monolayer adsorption of sulfur
on Ge(100) surfaces from aqueous (NH4)2S solution.
This treatment shows promising perspectives for the passivation of
high-mobility semiconductor surfaces and is therefore presently of
great technological importance. The adsorption mechanisms as well
as the adsorption geometry are thoroughly investigated at the atomic
scale, by both experiment and theory, applying X-ray absorption spectroscopy
and molecular dynamics simulations. Our findings indicate that sulfidation
in solution results in the formation of Ge–S–Ge bridges
along the [110] direction, with no indication for −SH surface
groups. A S–Ge bond length of 2.25 ± 0.05 Å was deduced,
which is affected by the chemical environment of the sulfur atoms,
i.e., by residual surface oxides. Our study provides novel insights
into the surface termination and atomic structure of (NH4)2S-treated Ge(100) surfaces and discusses possible differences
from in situ sulfur adsorption methods such as H2S or S2 exposure.