1971
DOI: 10.1016/0038-1101(71)90072-4
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Effect of geometry on double injection in semiconductors

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Cited by 7 publications
(2 citation statements)
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“…(7), we have the insulator regime (the second right-hand term is dominant), and the diffusion-dominated regime (the third right-hand term is dominant at high injection levels). [8][9][10] We assume here the semiconductor regime, Eq. (7) then becomes…”
Section: Theorymentioning
confidence: 99%
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“…(7), we have the insulator regime (the second right-hand term is dominant), and the diffusion-dominated regime (the third right-hand term is dominant at high injection levels). [8][9][10] We assume here the semiconductor regime, Eq. (7) then becomes…”
Section: Theorymentioning
confidence: 99%
“…The analytical expressions [6][7][8] in single-injection model in which one type of carrier (either electrons or holes) is injected into a semiconductor, have been derived. In addition an analytical expression [8][9][10] in the presence of recombination based on Shockley-ReadHall statistics have been derived. However, a bimolecular recombination process, known as Langevin recombination, in the case of low mobility materials such as organic semiconductors 11 12 has not been analytically examined * Author to whom correspondence should be addressed.…”
Section: Introductionmentioning
confidence: 99%