Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

“…The band at ~835 cm −1 , also noted in the Lorentzian profiles, is probably related with the V m O n structure, but its exact identity is not known. Notably, V 2 O and V 3 O defects at 10 K have [151,152] IR bands at 833 and 842 cm −1 , respectively.…”

“…Namely, in the case of Ge-doped Si samples, the production of V 3 O was larger in comparison with the C and Pb-doped samples. The enhancement production of V 3 O has been attributed to the enhancement of the reaction V 2 O + V V 3 O due to the increased availability [151] of VO and V 2 defects in Ge-doped Si. Additionally, due to the recombination of V 2 by the self-interstitials (V 2 + Si I 's V) the liberated vacancies promote [151] the reaction V 2 O + V V 3 O which leads to a further increase in V 3 O defects.…”

“…For example, the different defect configurations are given at the top of Figure 15, whereas the FTIR experimental results indicate their thermal evolution [93]. Notably, V2O and V3O defects at 10 K have [151,152] IR bands at 833 and 842 cm −1 , r tively. Figure 12 shows the amplitudes of the V2O and the V3O defects, respectivel function of the covalent radius of the isovalent dopants for the samples spectra sho Figure 11.…”

“…The band at ~835 cm −1 , also noted in the Lorentzian profiles, is probably related with the V m O n structure, but its exact identity is not known. Notably, V 2 O and V 3 O defects at 10 K have[151,152] IR bands at 833 and 842 cm −1 , respectively.Figure12shows the amplitudes of the V 2 O and the V 3 O defects, respectively, as a function of the covalent radius of the isovalent dopants for the samples spectra shown in Figure11. Regarding the V 2 O defect, taking the C L material as a basis, which can practically be considered as a simple Cz-Si sample without a C dopant, we observed that for the Ge, Sn and Pb-doped samples, the larger the covalent radius, the smaller the production of the V 2 O defect.…”

Modulating Phononic Landscapes: The Role of Silicon Ion Bombardment in Tailoring Si/Si+Ge and SiO2/SiO2+Ge Superlattices for Advanced Neutron Superreflector Applications

“…Silicon-Silicon+Germanium (Si/Si+Ge) and Silicon Dioxide-Silicon Dioxide+Germanium (SiO2/SiO2+Ge) superlattices herald a new era in neutron superreflector technologies, critical for enhancing neutron flux control and thermal energy conservation in next-generation nuclear reactors. These superlattices aim to curtail neutron thermalization, optimizing reactor safety and efficiency by leveraging reflective over absorptive interactions with neutrons [1,2,3] Central to this investigation is the role of silicon (Si) ion bombardment in altering phonon modes, specifically Transverse Optical (TO) and Longitudinal Optical (LO) modes. This modulation could redefine neutron behavior within these structures, paving the way for groundbreaking advancements in superreflector design and functionality.…”