Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon

Александров, О. В.; Afonin, N. N.

doi:10.1088/0268-1242/18/2/313

Cited by 6 publications

(3 citation statements)

References 30 publications

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“…115,116 Ge codoping p-type or n-type dopants affect the photovoltaic properties of Si. [117][118][119][120][121][122][123][124] Considering B codoping Ge improves segregation redistribution of boron during the thermal oxidation of Si and importantly limits the formation of boron-O defects. 118,119 Notably, boron-O defects in solar cells can induce significant degradation of carrier lifetime, leading to a reduction of the energy conversion efficiency of the cell.…”

Section: Ge Doping In Simentioning

confidence: 99%

Oxygen defect processes in silicon and silicon germanium

Chroneos

Sgourou

Londos

et al. 2015

Applied Physics Reviews

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Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

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Section: Ge Doping In Simentioning

confidence: 99%

Oxygen defect processes in silicon and silicon germanium

Chroneos

Sgourou

Londos

et al. 2015

Applied Physics Reviews

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“…Ge doping has been found to retard and suppress thermal donor formation [123,124] Ge codoping with Ga, As, P and B modifies the Si material properties and affects PV characteristics [126][127][128][129]. Importantly, it improves the diffusion segregation redistribution of boron and phosphorus during thermal oxidation of Si and also suppresses the formation of boron-oxygen defects [127,130].…”

Section: B Germanium Dopingmentioning

confidence: 99%

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Londos

Sgourou

Hall

et al. 2014

J Mater Sci: Mater Electron

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Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.

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“…This is an important procedure in semiconductors since it affects [66,67] the free charge carriers in the material. Ge also could affect [68] the distribution of B and P during the thermal oxidation of Si. Additionally, in irradiated Si, Ge improves [69] the radiation hardness of the wafers and, therefore, of the relevant devices.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

et al. 2022

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Crystalline silicon (Si) is the key material of the semiconductor industry, with significant applications for electronic and microelectronic devices. The properties of Si are affected by impurities and defects introduced into the material either during growth and/or material processing. Oxygen (O) and carbon (C) are the main impurities incorporated into the crystal lattice during growth via the Czochralski method. Both impurities are electrically neutral, however, implantations/irradiations of Si lead to the formation of a variety of oxygen-related and carbon-related defects which introduce deep levels in the forbidden gap, inducing generally detrimental effects. Therefore, to control Si behavior for certain applications, it is important to have an understanding of the properties and fundamental processes related with the presence of these defects. To improve Si, isovalent doping during growth must be employed. Isovalent doping is an important defect-engineering strategy, particularly for radiation defects in Si. In the present review, we mainly focus on the impact of isovalent doping on the properties and behavior of oxygen-related and carbon-related defects in electron-irradiated Si. Recent experimental results from infrared spectroscopy (IR) measurements coupled with theoretical studies involving density functional theory (DFT) calculations, are discussed. Conclusions are reached regarding the role of isovalent doping (carbon, (C), germanium (Ge), tin (Sn), and lead (Pb)) on the suppression of detrimental effects introduced into Si from technologically harmful radiation clusters induced in the course of material processing.

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Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon

Cited by 6 publications

References 30 publications

Oxygen defect processes in silicon and silicon germanium

Oxygen defect processes in silicon and silicon germanium

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

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