Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices

Qin, Xulei; Shi, Qidong; Shi, Feng; Li, Ye; De, Song

doi:10.1155/2022/5157252

Cited by 4 publications

(2 citation statements)

References 39 publications

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“…In this case, an internal electric field will appear in the doping region. The field strength of the built-in electric field satisfies the following formula [5]:…”

Section: Physical Model Of Electron Trajectoriesmentioning

confidence: 99%

The Effect of Heavy Doping Layer on Charge Collection Efficiency in P-type Silicon Substrate of EBCMOS Devices

Qin¹,

Shi²,

Li³

et al. 2023

Preprint

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In order to improve the charge collection efficiency, we simulated and experimentally tested the doping structure of the electron multiplication layer in EBCMOS. In this paper, we simulate the charge collection efficiency of EBCMOS under different doping methods by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the transport trajectories of electrons in the electron multiplication layer, the simulation results indicate that using a layered doping structure to reduce the thickness of the index heavily doped layer can effectively optimize the electric field distribution in the electron multiplier layer and reduce the recombination rate of electrons. The optimized doping structure has a significant effect on improving charge collection efficiency. Based on the simulation results, doped samples were prepared and tested. The test results showed that the charge collection efficiency obtained under the condition of a P-type silicon substrate thickness of 7μm and an index heavily doped layer thickness of 1μm was 72.65%, reducing the thickness of the index heavily doped layer to 0.1μm, the charge collection efficiency obtained can reach 86.27%, which proves that reducing the thickness of the index heavily doped layer can effectively improve the charge collection efficiency of EBCMOS devices.

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“…In this case, an internal electric field will appear in the doping region. The field strength of the built-in electric field satisfies the following formula [5]:…”

Section: Physical Model Of Electron Trajectoriesmentioning

confidence: 99%

The Effect of Heavy Doping Layer on Charge Collection Efficiency in P-type Silicon Substrate of EBCMOS Devices

Qin¹,

Shi²,

Li³

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…This article has been retracted by Hindawi, as publisher, following an investigation undertaken by the publisher [1]. This investigation has uncovered evidence of systematic manipulation of the publication and peer-review process.…”

mentioning

confidence: 99%

Retracted: Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices

2023

Advances in Multimedia

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Effects of H+ ion bombardment on GaAs photocathode surface with Cs-O and Cs-F activation layers

Zhang,

Wang

et al. 2023

Journal of Vacuum Science &Amp; Technology B

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To characterize the degree of damage to the GaAs photocathode surface caused by H+ ion back bombardment in the electron-bombarded complementary metal–oxide–semiconductor (EBCMOS), Stopping Range of Ions in Matter software based on the Monte Carlo method was used to investigate the effect of H+ ions with different incident energies on the surface of Cs-O (Cs-F) activated GaAs photocathode. During the simulations, different Cs/O (Cs/F) ratios ranging from 1:1 to 4:1 were considered. The sputtering rates, backscattering electrons, and longitudinal and lateral displacements along with vacancies/ions were investigated. According to the analysis of sputtering rates and vacancies, the optimal Cs/O ratio and Cs/F ratio are 3:1 and 4:1, respectively. With the increase in the incident energy, the backscattering rates decrease, the peak value of the H+ ion distribution decreases, while the corresponding peak position increases, and the peak value of the vacancy distribution increases first and then decreases, while the corresponding peak position increases. In addition, the projected ranges, and lateral and longitudinal displacements increase with the increase in incident energies, while the projected ranges may far exceed the straggle lengths and make the ion trajectory become more and more concentrated in the high incident energy region. This work helps to understand the degeneration mechanism of the GaAs photocathode operating in EBCMOS.

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Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices

Cited by 4 publications

References 39 publications

The Effect of Heavy Doping Layer on Charge Collection Efficiency in P-type Silicon Substrate of EBCMOS Devices

The Effect of Heavy Doping Layer on Charge Collection Efficiency in P-type Silicon Substrate of EBCMOS Devices

Retracted: Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices

Effects of H+ ion bombardment on GaAs photocathode surface with Cs-O and Cs-F activation layers

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