Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Joyce, P. B.; Krzyzewski, T. J.; Bell, GR; Jones, T.S.; Malik, Surama; Childs, David; Murray, R.

doi:10.1103/physrevb.62.10891

Cited by 207 publications

(121 citation statements)

References 26 publications

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“…With a minimum set of assumptions, the simulated values reproduce the sign reversal of the σ curve observed during the In deposition step, strongly supporting the partial melting and migration effects discussed in previous experimental and theoretical works. [2][3][4][5] The overall agreement shown in Fig. 4(b) is also remarkable although, in the long term the experimental curve accumulates less stress than the simulated one.…”

supporting

confidence: 64%

“…3,4 Joyce et al made a study varying the InAs growth rate which suggested that the strain field gradients assist the migration of In atoms from the WL to the QDs. 5 Additionally, Bottomley suggested that this In transfer from the WL might be favoured by the existence of liquid phases at the surface. A direct experimental demonstration for such mechanisms could not be given at that moment, though.…”

mentioning

confidence: 99%

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Strain driven migration of In during the growth of InAs/GaAs quantum posts

et al. 2013

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Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during the growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures

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supporting

confidence: 64%

mentioning

confidence: 99%

Strain driven migration of In during the growth of InAs/GaAs quantum posts

et al. 2013

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“…The artifact in observations of S-K islands has not yet been reported, although many authors have pointed out its presence. 18,19,20,21,22,23 The determination of the broadening due to the tip artifact gives us a method by which we can extract the actual size of the S-K islands from their AFM images. The establishment of this method provides a practical way to determine the actual sizes of the islands of many samples.…”

Section: Introductionmentioning

confidence: 99%

Tip artifact in atomic force microscopy observations of InAs quantum dots grown in Stranski–Krastanow mode

Shiramine

Muto

Shibayama

et al. 2007

Journal of Applied Physics

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The tip artifact in atomic force microscopy (AFM) observations of InAs islands was evaluated quantitatively. The islands were grown in the Stranski-Krastanow mode of molecular beam epitaxy. The width and height of the islands were determined using transmission electron microscopy (TEM) and AFM. The average [110] in-plane width and height determined using TEM excluding native oxide were 22 and 7 nm, respectively; those determined using AFM including the oxide were 35 and 8 nm, respectively. The difference in width was due to the oxide and the tip artifact. The sizes including the oxide were deduced from TEM observations to be a width of 27 nm and a height of 6 nm with correction for the thickness of the oxide. The residual difference of 8 nm between the width determined using AFM and that determined using TEM including the oxide was ascribed to the tip artifact. The results enable us to determine the actual size of the islands from their AFM images.

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“…A small blue shift in the emission, observed in case of the samples grown at 0.2 ML s −1 and being allowed to in situ annealing for 50 s, can be attributed to degradation in dot morphology because of In desorption at high substrate temperature (>520°C ), from low Indium fraction containing islands. It has been reported that QDs grown at a higher growth rate have smaller aspect ratio and have lower Indium content [22] than the islands grown at comparatively slower rate. Further, the high integrated PL intensity in case of the samples which were encapsulated just after the growth pause gives an essence that the dot density is maximal just after the growth pause and with the in situ annealing during the pause agglomeration of the grown islands takes place due to ripening.…”

Section: Resultsmentioning

confidence: 99%

A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs

et al. 2008

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We investigate the effect of in situ annealing during growth pause on the morphological and optical properties of self-assembled InAs/GaAs quantum dots (QDs). The islands were grown at different growth rates and having different monolayer coverage. The results were explained on the basis of atomic force microscopy (AFM) and photo-luminescence (PL) measurements. The studies show the occurrence of ripening-like phenomenon, observed in strained semiconductor system. Agglomeration of the selfassembled QDs takes place during dot pause leading to an equilibrium size distribution. The PL properties of the QDs are affected by the Indium desorption from the surface of the QDs during dot pause annealing at high growth temperature (520°C) subsiding the effect of the narrowing of the dot size distribution with growth pause. The samples having high monolayer coverage (3.4 ML) and grown at a slower growth rate (0.032 ML s −1 ) manifested two different QD families. Among the islands the smaller are coherent defect-free in nature, whereas the larger dots are plastically relaxed and hence optically inactive. Indium desorption from the island surface during the in situ annealing and N. Halder · R. Rashmi · S. Chakrabarti ( ) Centre

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Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Cited by 207 publications

References 26 publications

Strain driven migration of In during the growth of InAs/GaAs quantum posts

Strain driven migration of In during the growth of InAs/GaAs quantum posts

Tip artifact in atomic force microscopy observations of InAs quantum dots grown in Stranski–Krastanow mode

A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs

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