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The effects of GaAs overgrowth on the structural properties of large low-growth-rate InAs quantum dots (LGR-QDs) grown on GaAs(001) are examined using in situ scanning tunneling microscopy. Strongly anisotropic surface diffusion produces a characteristic valley-ridge structure above the LGR-QDs and the surface is not planarized even after a cap thickness >400 Å. The evolution of surface morphology proceeds very differently to the case of smaller conventional growth rate QDs capped under the same conditions, due to the different initial strain states of the QDs.

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