Optimizing the growth of 1.3 μm InAs/GaAs quantum dots

Joyce, P. B.; Krzyzewski, T. J.; Bell, Gavin R.; Jones, T.S.; Ru, Eric C. Le; Murray, R.

doi:10.1103/physrevb.64.235317

Cited by 81 publications

(88 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The total amount of InAs deposited was 2.2 monolayers ͑1 ML= 0.3 nm͒ and the growth rate was 0.012 ML s −1 . 10 Here, we discuss free-standing QDs uncapped by GaAs. Samples were transferred through air between the MBE chamber and the MEIS system, with an arsenic capping-decapping procedure employed to minimize oxidation.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

Quinn

Wilson

Hatfield

et al. 2005

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 99%

“…7,8 This alloying effect depends on growth conditions, particularly temperature 2 and growth rate. 10 In this letter we describe the use of medium-energy ion scattering ͑MEIS͒ to produce composition profiles of InAs QDs. The MEIS technique is able to probe layered materials with near atomic layer resolution.…”

mentioning

confidence: 99%

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

Quinn

Wilson

Hatfield

et al. 2005

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…The high density smaller dots of height 6 ∼ 8 nm have uniform size distribution, whereas the large irregular dots are of height 13-15 nm. In self-assembled growth, for increased monolayer coverage at slow deposition rate there is little increase in the density of small regular islands [13]. But there is a considerable increase in the density of large irregular shaped 3D islands which are plastically relaxed due to the accumulation of strain related defects.…”

Section: Resultsmentioning

confidence: 99%

“…But there is a considerable increase in the density of large irregular shaped 3D islands which are plastically relaxed due to the accumulation of strain related defects. These large islands are the favourable sites for the attachment of adatoms during in situ annealing [13]. The adatoms migrate across the growth surface and clusters at the large islands as a result of the enhancement of the surface diffusion mobility of the adatoms during annealing at elevated temperature.…”

Section: Resultsmentioning

confidence: 99%

“…Resolution of the above issues necessitates a detailed understanding of the mechanism of nucleation, island transition, etc. in lattice mismatched InAs/GaAs material system by controlling the different growth factors like total amount of InAs material deposited [9,10], growth temperature [11,12], growth rate [12,13] and value of As 2 (As 4 ) pressure or As/In flux ratio [14,15]. Another way these issues can be resolved is by developing a suitable post growth scheme like thermal annealing of the active InAs islands just after QD deposition but before encapsulating the dots within the GaAs matrix, i.e.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs

et al. 2008

View full text Add to dashboard Cite

We investigate the effect of in situ annealing during growth pause on the morphological and optical properties of self-assembled InAs/GaAs quantum dots (QDs). The islands were grown at different growth rates and having different monolayer coverage. The results were explained on the basis of atomic force microscopy (AFM) and photo-luminescence (PL) measurements. The studies show the occurrence of ripening-like phenomenon, observed in strained semiconductor system. Agglomeration of the selfassembled QDs takes place during dot pause leading to an equilibrium size distribution. The PL properties of the QDs are affected by the Indium desorption from the surface of the QDs during dot pause annealing at high growth temperature (520°C) subsiding the effect of the narrowing of the dot size distribution with growth pause. The samples having high monolayer coverage (3.4 ML) and grown at a slower growth rate (0.032 ML s −1 ) manifested two different QD families. Among the islands the smaller are coherent defect-free in nature, whereas the larger dots are plastically relaxed and hence optically inactive. Indium desorption from the island surface during the in situ annealing and N. Halder · R. Rashmi · S. Chakrabarti ( ) Centre

show abstract

Large self-assembled InAs/GaAs quantum dots with an optical emission above 1.3 μm

Quivy¹,

Silva

Lamas

et al. 2004

phys. stat. sol. (c)

View full text Add to dashboard Cite

We report on the optical and morphological properties of self-assembled InAs quantum dots deposited on GaAs(001) substrates by molecular beam epitaxy using a combination of extreme growth combinations as low InAs growth rate, high-temperature InAs deposition and fast GaAs capping. Atomic-force microscopy showed that, in such conditions, large InAs quantum dots with a height well over 100 Å can be obtained. After capping, these structures exhibit optical activity well beyond 1.3 µm at room temperature, reaching 1.5 µm in some cases.

show abstract

Optimizing the growth of 1.3 μm InAs/GaAs quantum dots

Cited by 81 publications

References 23 publications

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs

Large self-assembled InAs/GaAs quantum dots with an optical emission above 1.3 μm

Contact Info

Product

Resources

About