Large self-assembled InAs/GaAs quantum dots with an optical emission above 1.3 μm

Abstract

We report on the optical and morphological properties of self-assembled InAs quantum dots deposited on GaAs(001) substrates by molecular beam epitaxy using a combination of extreme growth combinations as low InAs growth rate, high-temperature InAs deposition and fast GaAs capping. Atomic-force microscopy showed that, in such conditions, large InAs quantum dots with a height well over 100 Å can be obtained. After capping, these structures exhibit optical activity well beyond 1.3 µm at room temperature, reaching 1.5 µm in some cases.

InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging

“…The deduced PL linewidth is 64 meV ( 63 nm). The linewidth is comparable to the data from InAs QDs grown by SK growth mode with typical PL linewidths of 60-80 meV [20]. The GS emission becomes saturate and the intensity of the first excited state (ES1) becomes dominant at above 30 W/cm .…”