On the nature of quantum dash structures J. Appl. Phys. 95, 6103 (2004); 10.1063/1.1715135Dependence of the emission wavelength on the internal electric field in quantum-dot laser structures grown by metal-organic chemical-vapor deposition

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We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback oscillation. The fabricated SLDs produce a close-to-Gaussian shaped spectrum centered at 1210 nm with a bandwidth of 135 nm. Spectral ripple as low as 0.3 dB has been measured.Index Terms-Broadband light source, optical coherence tomography (OCT), quantum dot (QD), superluminescent diode.

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