Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD

Tian, Wenjing; Yan, Weiyi; Dai, Jiangnan; Li, S L; Tian, Ye; Xiong, Huiming; Zhang, J B; Fang, Yanyan; Wu, Zheng; Chen, C Q

doi:10.1088/0022-3727/46/6/065303

Cited by 22 publications

(14 citation statements)

References 19 publications

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“…2). Above 1300°C, preferred orientations are obtained and change from the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) to the (21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31) and finally the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane normal to the substrate surface with increasing deposition temperature. Both the evolution of grain size and texture of such AlN layers can be explained by the Van der Drift's evolutionary selection growth mechanism [40].…”

Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

“…3, with respect to the 2H-AlN würtzite crystal structure (hexagonal system). The (0001) polar plane and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) and (10-10) non-polar planes are represented in Fig. 3a.…”

Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

“…3a. The (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and (21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31) semi-polar planes are represented in Fig. 3b.…”

Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

“…The use of thick coatings of high-Z materials like tungsten (W) or tungsten alloys (W 1 − x Re x ) is a promising solution to overcome (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) and (10-10) non-polar planes and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and (21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31) semi-polar planes are represented. In this study, preferred orientations obtained for thick polycrystalline AlN layers are (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22), (21)(22)(23)(24)…”

Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

“…It was successfully developed by Slack and McNelly [13,14] in the mid-1970s. Several methods such as pulsed laser deposition (PLD) [15], chemical vapor deposition (CVD and MOCVD) [16] or hydride vapor phase epitaxy (HVPE) [17][18][19][20], molecular beam epitaxy (MBE) [21] and magnetron sputtering [22] have been employed for deposition of AlN thin or thick films for different applications. Important issues for deposition techniques [23][24][25][26] of the functional layers are: (1) large area deposition; (2) crystallinity of the grown layers; (3) residual stress and strain; (4) strain gradients in the multilayer architecture and (5) surface and interface morphology.…”

Section: Introductionmentioning

confidence: 99%

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High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

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Coudurier

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Surface and Coatings Technology

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Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

“…3a. The (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and (21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31) semi-polar planes are represented in Fig. 3b.…”

Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

Section: Polycrystalline Thick Coatingsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Pons

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Coudurier

et al. 2013

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In‐Plane AlN‐based Actuator: Toward a New Generation of Piezoelectric MEMS

Bespalova

Nieminen

Gabrelian

et al. 2023

Adv Elect Materials

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A novel design that utilizes aluminum nitride (AlN) piezoelectric thin films deposited on vertical surfaces for lateral motion and sensing is a step toward emerging multi-axial microelectromechanical systems (MEMS). This work demonstrates the fabrication process and potential applications of an in-plane moving piezoactuator. The actuator is excited using the inverse piezoelectric effect of the AlN thin film grown on the vertical surfaces of a Si cantilever. Lateral motion of the actuator is enabled when a voltage is applied between the top and bottom electrodes of the device, which are highly doped Si and titanium nitride thin film. The motion of the actuator is captured using scanning electron microscope.

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Nanometer-thin ALD-Al₂O₃for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE

Banal

Imura

Tsuya³

et al. 2016

Phys. Status Solidi A

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The epitaxial quality of AlN grown on sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) is improved upon the incorporation of nanometer‐thin amorphous Al2O3 interlayer by atomic layer deposition (ALD). The critical ALD‐Al2O3 thickness is determined to be around 1 nm, where the AlN exhibits a parallel step‐and‐terrace surface morphology. However, with increasing ALD‐Al2O3 thickness, the surface changes to meandering step‐and‐terrace morphology due to the formation of surface defects in the ALD‐Al2O3, leading to growth spiral in AlN. The surface defects are attributed to the transformation of amorphous Al2O3 into crystalline structure. The same tendency in the structural quality is also observed by XRD measurements, where the ω‐scan of symmetric (0002) and asymmetric (10true1¯2) reflections increases with ALD‐Al2O3 thickness. Raman analysis and XRD measurements both confirm that AlN epilayers exhibit tensile strain and approach the relaxed state with increasing ALD‐Al2O3 thickness. The high‐quality AlN grown on 1‐nm‐thin ALD‐Al2O3 exhibits the highest tensile strain, effectively circumventing the relaxation through the reduction of threading dislocations.

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Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD

Cited by 22 publications

References 19 publications

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

In‐Plane AlN‐based Actuator: Toward a New Generation of Piezoelectric MEMS

Nanometer-thin ALD-Al₂O₃for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE

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Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD

Cited by 22 publications

References 19 publications

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

In‐Plane AlN‐based Actuator: Toward a New Generation of Piezoelectric MEMS

Nanometer-thin ALD-Al2O3for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE

Contact Info

Product

Resources

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Nanometer-thin ALD-Al₂O₃for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE