Effect of growth time on Ti-doped ZnO nanorods prepared by low-temperature chemical bath deposition

Bidier, Shaker A.; Hashim, M.R.; Al-Diabat, Ahmad M.; Bououdina, M.

doi:10.1016/j.physe.2017.01.009

Cited by 51 publications

(22 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The axial growth rate was found to be more pronounced than the lateral growth rate, which can be attributed to the low surface free energy within the c-axis [31,32]. Figure 6 shows that the length-growth rate (length/time) increases first then drops as the deposition time increases, which is associated with the consumption of the (Zn +2 , OH −1 ) species with time; similar results have been reported previously [25,33]. The morphological parameters are listed in table 3.…”

Section: Resultssupporting

confidence: 83%

“…Figure 9 shows that the Schottky LED with 1.2-μm ZnO NRs has 10 times higher emission intensity than that of one with 0.383-μm ZnO NRs and that the Schottky LED with 3.9-μm ZnO NRs have 300 times higher emission intensity than that of one with 0.383-μm ZnO NRs. It was previously reported that the deep band emission intensity depends on the size of the ZnO and that the extraction factor for ZnO is low due to its high absorption coefficients (∼2×105 cm −1 ), which increases the probability of ultraviolet (UV) reabsorption within the crystal itself [32][33][34]. This reabsorbed UV can excite the defect states in the structures, resulting in visible deep band emission because the defects responsible for this emission are not confined near the surface but are ubiquitous inside the ZnO NRs [29].…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Modulating the ZnO NR shape to enhance the luminescence efficiency for optoelectronic applications

Bano

Hussain

El-Naggar

et al. 2020

Mater. Res. Express

View full text Add to dashboard Cite

It is essential to control the size of zinc oxide (ZnO) nanorods (NRs) for the improvement of tunable optoelectronic applications. In this paper, we present the results of a systematic and extensive study that explored the effect of growth parameters on the morphology and optoelectronic properties of ZnO NRs. We found that the length and width of ZnO NRs can be efficiently tuned by carefully controlling the growth parameters and by modulating the ZnO seed with reduced graphene (rGO). These results could give us a better understanding of the growth behavior of ZnO NRs and could contribute to the control of the morphology of these NRs for nano-device applications. Moreover, the effect of growth parameters on the optoelectronic properties of ZnO NRs was thoroughly investigated by fabricating light-emitting diodes (LEDs) with different morphologies of the ZnO NRs and the correlation between the morphology and the luminescence efficiency of ZnO was established. These investigations illustrate a viable and highly promising approach to enhance the luminescence intensity of ZnO NR-based LEDs by 500 times. The present work will guide researchers in the production of low-temperature, size-controlled, and aligned ZnO NRs for tunable highly luminescent optoelectronic applications.

show abstract

Section: Resultssupporting

confidence: 83%

Section: Resultsmentioning

confidence: 99%

Modulating the ZnO NR shape to enhance the luminescence efficiency for optoelectronic applications

Bano

Hussain

El-Naggar

et al. 2020

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

“…As the immersion time increased to 2 h, the length of the ZnO NRs were approximately 1.6 µm which is almost twice longer than 0.5 h sample, which is an improvement with respect to other hydrothermal method that used acetates and nitrates-derived precursor to grow nanorods (the minimal immersion time captured from several works to grow nanorods are presented in Table 1). However, a further increment in the immersion time to 4 h showed insignificant differences in terms of the morphologies and dimensionality of the ZnO NRs, which can be ascribed to the insufficient amount of Zn 2+ ions supplied to the system, hence abrupted the growth of ZnO NRs [31]. These showed that in a hydrothermal, precursor plays a role in supplying Zn 2+ ions to the system in order to completely form ZnO.…”

Section: Methodsmentioning

confidence: 96%

Developing Conductive Highly Ordered Zinc Oxide Nanorods by Acetylacetonate-Assisted Growth

et al. 2020

View full text Add to dashboard Cite

Highly ordered vertically grown zinc oxide nanorods (ZnO NRs) were synthesized on ZnO-coated SiO2/Si substrate using zinc acetylacetonate hydrate as a precursor via a simple hydrothermal method at 85 °C. We used 0.05 M of ZnO solution to facilitate the growth of ZnO NRs and the immersion time was varied from 0.5 to 4 h. The atomic force microscopy revealed the surface roughness of ZnO seed layer used to grow the ZnO NRs. The morphology of vertically grown ZnO NRs was observed by field emission scanning electron microscopy. X-ray diffraction examination and transmission electron microscopy confirmed that the structure of highly ordered ZnO NRs was crystalline with a strong (002) peak corresponded to ZnO hexagonal wurtzite structure. The growth of highly ordered ZnO NRs was favorable due to the continuous supply of Zn2+ ions and chelating agents properties obtained from the acetylacetonate-derived precursor during the synthesis. Two-point probe current–voltage measurement and UV–vis spectroscopy of the ZnO NRs indicated a resistivity and optical bandgap value of 0.44 Ω.cm and 3.35 eV, respectively. The photoluminescence spectrum showed a broad peak centered at 623 nm in the visible region corresponded to the oxygen vacancies from the ZnO NRs. This study demonstrates that acetylacetonate-derived precursors can be used for the production of ZnO NRs-based devices with a potential application in biosensors.

show abstract

“…The fact that the radius of 4-coordinate Ga 3+ (0.62 Å) and that of In 3+ (0.81 Å) is closer to that of 4-coordinate Zn 2+ (0.74 Å), make it useful as a codopant for ZnO structures [10,11]. Thin film deposition of ZnO can be carried out by various techniques like sputtering [12], pulsed laser deposition [13], microwave assisted synthesis [14], sol-gel [15], ultrasonic spray pyrolysis [16], chemical bath deposition [17], etc. Among these, radio frequency (RF) sputtering is more suitable for high quality and large area deposition.…”

Section: Introductionmentioning

confidence: 99%

Elucidation of structural, morphological, optical and photoluminescence properties of single and (In, Ga) co-doped ZnO nanocrystalline thin films

Shaheera¹,

Girija

Kaur

et al. 2019

Bull Mater Sci

View full text Add to dashboard Cite

Single and co-doped ZnO thin films are currently under intense investigation and development for optoelectronic applications. Here in this study, pristine, indium-doped (IZO), gallium-doped (GZO) and co-doped (IGZO) ZnO thin films were deposited on a glass substrate using radio frequency magnetron sputtering. A comparative study of all the films was carried out on the basis of their various properties. The effect of single and co-doping on the structural (X-ray diffraction (XRD) studies and Raman studies), morphological (field emission scanning electron microscopy and energy dispersive X-ray spectroscopy studies) and optical properties (ultraviolet-visible (UV-Vis) and photoluminescence (PL)) of the deposited films was investigated. X-ray photoelectron spectroscopy (XPS) characterization was employed to analyse the surface chemical composition and bonding of the deposited film. From the XRD patterns, it was found that the films were highly crystalline in nature and preferentially oriented along the (002) direction with a hexagonal wurtzite structure, consistent with Raman analysis. IGZO films displayed a dramatic improvement in the surface morphology as compared with the single dopant films due to the compensation effect of gallium and indium doping which reduced the lattice strain. The XPS analysis confirmed the presence of the oxidized dopants in each film. All thin films have shown excellent optical properties with more than 90% transmission in the visible range of light. The blue-shift of the absorption edge accompanied by the increase of the optical band gap confirmed the Burstein-Moss effect. The UV PL peak originated from the near band edge emission of crystalline ZnO, while the visible PL was associated with the radiative transition related to oxygen interstitial (Oi) defects in the ZnO structure.

show abstract

Effect of growth time on Ti-doped ZnO nanorods prepared by low-temperature chemical bath deposition

Cited by 51 publications

References 33 publications

Modulating the ZnO NR shape to enhance the luminescence efficiency for optoelectronic applications

Modulating the ZnO NR shape to enhance the luminescence efficiency for optoelectronic applications

Developing Conductive Highly Ordered Zinc Oxide Nanorods by Acetylacetonate-Assisted Growth

Elucidation of structural, morphological, optical and photoluminescence properties of single and (In, Ga) co-doped ZnO nanocrystalline thin films

Contact Info

Product

Resources

About