Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAs

Vorobkalo, F. M.; Glinchuk, K. D.; Prokhorovich, A. V.; John, George Kunnackal

doi:10.1002/pssa.2210150132

Cited by 28 publications

(2 citation statements)

References 8 publications

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“…Figure 2 c shows the radiative transition between the state E

near the conduction-band and a deep-state E

, as well as the fast capture [ 7 ] of free holes onto deep-centers. The literature [ 8 , 9 , 10 ] says that the upper state E

corresponds to a state centered on the donor in a donor-V

complex, whereas the lower state E

corresponds to a state centered on the V

in the complex.…”

Section: Photoluminescence and Electroluminescence Studiesmentioning

confidence: 99%

Progress to a Gallium-Arsenide Deep-Center Laser

Pan

2009

Materials

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Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, photoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm) by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers), which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

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“…Figure 2 c shows the radiative transition between the state E

near the conduction-band and a deep-state E

, as well as the fast capture [ 7 ] of free holes onto deep-centers. The literature [ 8 , 9 , 10 ] says that the upper state E

corresponds to a state centered on the donor in a donor-V

complex, whereas the lower state E

corresponds to a state centered on the V

in the complex.…”

Section: Photoluminescence and Electroluminescence Studiesmentioning

confidence: 99%

Progress to a Gallium-Arsenide Deep-Center Laser

Pan

2009

Materials

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“…Now there are some methods enabling to make similar decomposition. The most effective of them are based on the analysis of integral spectra changes accompanying variations in experimental conditions: the intensity [7] or wavelength [7,8] of excitation, concentrations of centres of glow [9], the temperature [10], the additional illumination from damping area of one bands [11]. Using the results obtained with the Alentsev-Fok method [11] allows to determine, in a number of cases, the shape of an contour of a individual band, quantity of these bands in an integral spectrum without any prior assumption about their form.…”

mentioning

confidence: 99%

Individual glow bands of Mn2+ ions photoluminescence in plastically deformed ZnS single crystals

Prokofiev¹

2004

Semicond. Phys. Quantum Electron. Optoelectron.

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The spectra of a photoluminescence (PL) in plastically deformed (PD) ZnS:Mn single crystals are investigated. It is shown that the PD processes cause change of a quantitative ratio between separate types of glow manganese centres (MC) as a result of their local symmetry rearrangement. After decomposing of PL integral spectra by individual PL bands using the cumulative distribution Gauss function, the nature of a ratio change between PL MC of different types is established. The individual with the peaking in the range 618620 nm is discovered.

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Effect of Neutron Irradiation and Annealing on the Intensity of the Copper Related 1.01 eV Emission Band in n‐type GaAs

Glinchuk¹,

Prokhorovich²

1997

Cryst. Res. Technol.

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32 1997 3 391-394 Effect of Neutron Irradiation and Annealing on the Intensity of the Copper Related 1.01 eV Emission Band in n-type GaAs Effect of neutron irradiation (E = 2 MeV, CP 5 1015 n/cm2) and subsequent annealing ( T I 700 "C, t = 30 min) on the intensity of the copper-related peaked at hv, =1.01 eV emission band in n-type GaAs (no = 2 x 1OI8 ~m -~) is studied. A strong irradiation-induced increase of the above emission intensity was observed testifying about the irradiation-stimulated growth in the concentration of copper-related 1.01 eV radiative centres (CucaVk pain). A model is presented to explain this effect. Msyse~o mumine HeirrpoHHoro 06ny.re~ux (E = 2 M3B, 0 5 1015 H/cM~) u nocnenyIou(er0 OTnomemoil aToMaMH Mem nonocbi n i o~m e q e~~s i c nonoxemeM MaKcaMyMa w3ny.reHm y~a 3 a~~o P IIOJIOCM nmmniecqeqw, cB~eTenbcrrlym~ee o p~Ha~omonuMynHpoBamoM m r a (T 5 700"c, t = 30 MWH) KpUCEUInOB n-GaAs (no = 2 X 10" CM-3) Ha HHTeHCUBHOCTb 06ychv, = 1.01 3B. HaBnIonanocb 3~amenbHoe BbI3BaHHOe o 6~y x e~a e~ y B e n m e H w e HHTeHCHBHOCTH BO3paCTaHHH K O w e H T p m W m Y w Y e M b I X aTOwaMSi Menu 1.01 3B U3n)ruaIoLWX UeeIITpOB (nap cU~. v, ). npenJIOXeHa MOnfXb, 0 6~b r c~x m 1 4 a r r 06Hap)CiCeHHbIfi B@#)eKT.

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Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAs

Cited by 28 publications

References 8 publications

Progress to a Gallium-Arsenide Deep-Center Laser

Progress to a Gallium-Arsenide Deep-Center Laser

Individual glow bands of Mn2+ ions photoluminescence in plastically deformed ZnS single crystals

Effect of Neutron Irradiation and Annealing on the Intensity of the Copper Related 1.01 eV Emission Band in n‐type GaAs

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