Effect of Heat Treatment on Electrical Properties of Polycrystalline CuInSe&lt;sub&gt;2&lt;/sub&gt; Thin Films Prepared by Two Methods

Hydrogenation and oxygenation of CuInSe2 have been studied by x-ray photoelectron spectroscopy in order to investigate the defect properties. Initially oxidized p-type material was type-converted by low-energy hydrogen ion implantation. A defect model has been proposed suggesting the reactivation of selenium vacancies (VSe) as well as the creation of additional indium copper antisites (InCu). For cleaved samples, a direct influence of hydrogen on the net-donor concentration has been assumed. The resulting Cu-depleted surface is the result of the downward band bending and the migration of Cu into the bulk by the built-in electric field. The subsequent oxidation leads to a passivation of VSe and InCu, and hence yields a reconversion of the conductivity type.

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Chemical defect explanation for the effect of postdeposition treatments on CuInSe2

Otte

Chassé

Lippold

et al. 2002

Journal of Applied Physics

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Effect of Heat Treatment on Electrical Properties of Polycrystalline CuInSe<sub>2</sub> Thin Films Prepared by Two Methods

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Chemical defect explanation for the effect of postdeposition treatments on CuInSe2

Chemical defect explanation for the effect of postdeposition treatments on CuInSe2

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