Effect of heat treatment on the optical absorption of BiSbTe3 thin films

Van der Waals epitaxial MOCVD-growth of (BixSb1−x)2Te3(0 <x< 1) films

“…While the synthesis of bulk as well as nanostructured p-type (Bi x Sb 1−x ) 2 Te 3 is well established [1,[28][29][30][31][32][33], reports on the growth of high quality epitaxial thin films of these materials are rather scarce [34]. Ternary (Bi x Sb 1−x ) 2 Te 3 thin films with a very limited range of x values were fabricated by molecular beam epitaxy [35], physical vapor deposition [36], mechanical alloying [37,38], dc magnetron sputtering [39] and potentiostatic electrodeposition [40]. (Bi 0.25 Sb 0.75 ) 2 Te 3 is the best commercially available p-type thermoelectric material at room temperature and much effort has been made to improve the performance of (Bi x Sb 1−x ) 2 Te 3 films [41].…”

One-step electrochemical preparation of the ternary (BixSb1−x)2Te3 thin films on Au(111): Composition-dependent growth and characterization studies

“…Here, the growth rates, necessary conditions and lattice constants of the Bi 2 Te 3 and Sb 2 Te 3 are significantly similar. Various methods have been used to synthesize ternary (Bi x Sb 1−x ) 2 Te 3 films, including physical vapor deposition [11], mechanical alloying [12] and potentiostatic electrodeposition [3]. In these studies, ternary compounds with only several x values were prepared.…”