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We report on the fabrication and electrical characterization of epitaxial metal-semiconductor junctions between Y1Ba2Cu3O7−δ (YBCO) (optimally doped and Zn doped) and (001) Nb:SrTiO3 with different Nb concentrations (0.05%, 0.1%, and 0.5%). The current-voltage characteristics of such epitaxial junctions are nonlinear and rectifying, and these are dramatically enhanced with decreasing Nb concentration and Zn doping. Indeed, for the case of 0.05% Nb:STO, reverse breakdown voltage as high as −18V(−28V) is realized for optimally doped (Zn doped) YBCO. These data are analyzed within the framework of thermionic emission∕diffusion models for Schottky and metal-insulator-semiconductor-type junctions.

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