Room temperature rectifying characteristics of epitaxial Y1Ba2Cu3−xZnxO7−δ (x=0.0,0.2) and Nb:SrTiO3 (Nb: 0.05%, 0.1%, 0.5%) heterojunctions

Ramadan, Wegdan; Ogale, S. B.; Dhar, S.; Fu, Liangjie; Browning, Nigel D.; Venkatesan, T.

doi:10.1063/1.2172867

Cited by 15 publications

(7 citation statements)

References 32 publications

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“…This result implies that there is no Nb depletion layer formed at the interface during film growth. The good rectifying current-voltage characteristics of such epitaxial junctions reported previously can be intrinsically described from the Schottky junctions between the YBCO and the Nb-doped SrTiO 3 substrate [17].…”

Section: Resultsmentioning

confidence: 57%

“…The thin films of YBCO were grown at 200 m Torr oxygen pressure at the substrate temperature of 800 • C and then cooled to room temperature in oxygen pressure of 400 Torr. The detailed thin film growth procedures are provided in [17]. The T c (zero resistance) of the thin films was measured to be as high as ∼91 K with a sharp transition and the thin films showed the improved normal state properties, which are described elsewhere [18].…”

Section: Methodsmentioning

confidence: 97%

See 1 more Smart Citation

Interface and defect structures in YBa₂Cu₃O_7−δand Nb : SrTiO₃heterojunction

Fu¹,

Browning²,

Ramadan³

et al. 2006

J. Phys. D: Appl. Phys.

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YBa2Cu3O7−δ thin films grown on a Nb-doped SrTiO3 substrate by a pulsed laser deposition method have been fully characterized by scanning transmission electron microscopy Z-contrast imaging and electron energy loss spectroscopy techniques. The Nb distribution was found to be uniform and unchanged across the interface, ensuring a high quality p–n junction heterointerface. We first observed the coexistence of 124 and 125 YBCO defect structure phases, appearing as planar defects in a YBCO thin film. Dispersive Y2O3 nanoparticles have also been observed in the thin film. The interaction of these defect structures and Y2O3 nanoparticles is thought to be beneficial for pinning flux through the entire film thickness.

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Section: Resultsmentioning

confidence: 57%

Section: Methodsmentioning

confidence: 97%

Interface and defect structures in YBa₂Cu₃O_7−δand Nb : SrTiO₃heterojunction

Fu¹,

Browning²,

Ramadan³

et al. 2006

J. Phys. D: Appl. Phys.

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“…One route is where a hole-doped oxide is deposited on the n-type semiconductor oxide to form the p-n junctions. [1][2][3][4][5][6] The other route is where the oxide insulator is used to sandwich the semiconductor p-type oxide and semiconductor n-type oxide to prepare the p-I-n junctions. [7][8][9][10] To develop the oxide electronics based on the functional oxides, such as optimally doped oxide superconductors and manganite, the p-n junctions which are made from optimally doped oxides are necessary.…”

mentioning

confidence: 99%

Metallic oxide p-I-n junctions with ferroelectric as the barrier

Yuan

Cao

et al. 2007

Applied Physics Letters

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“…Devices based on oxide-oxide interfaces, including Schottky and p-n junctions [3][4][5][6] and field-effect transistors (FETs) 7,8 are being extensively investigated. Significant progress has been achieved in the field-effect control of the carrier density of a superconducting cuprate using a FET device 9 and more recently using electric double layer (EDL) techniques.…”

mentioning

confidence: 99%

Disorder-controlled superconductivity at YBa2Cu3O7/SrTiO
García‐Barriocanal
¹
,
Pérez-Muñoz
²
,
Sefrioui
³

et al. 2013
Phys. Rev. B

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We examine the effect of interface disorder in suppressing superconductivity in coherently grown ultrathin YBa 2 Cu 3 O 7 (YBCO) layers on SrTiO 3 (STO) in YBCO/STO superlattices. The termination plane of the STO is TiO 2 and the CuO chains are missing at the interface. Disorder (steps) at the STO interface cause alterations of the stacking sequence of the intracell YBCO atomic layers. Stacking faults give rise to antiphase boundaries which break the continuity of the CuO 2 planes and depress superconductivity. We show that superconductivity is directly controlled by interface disorder outlining the importance of pair breaking and localization by disorder in ultrathin layers. Complex oxide interfaces in epitaxial heterostructures have become a very active research area. The thrust of this rapidly expanding field comes partly from the plethora of novel effects and physical phenomena discovered in oxide superlattices and partly by an exciting horizon of novel devices and applications. The electronic reconstruction taking place at these interfaces is known to have important effects triggering modifications of fundamental electronic parameters such as charge density, on site Coulomb interaction and bandwidth giving rise to stabilization of novel electronic ground states with emerging properties.1,2 Apart from its fundamental interest, the possibility of tailoring the electronic structure of the interfaces to display novel behaviors and functionalities may open interesting pathways in device design for oxide electronics. Although progress has been made in achieving atomic precision of the interface growth, epitaxial strain, intermixing, or more sophisticated electronic processes related to the polar nature of complex oxides play a role in generating chemical or physical disorder, which may cause profound changes in the free carrier density or other physical quantities controlling the equilibrium between phases.Devices based on oxide-oxide interfaces, including Schottky and p-n junctions 3-6 and field-effect transistors (FETs) 7,8 are being extensively investigated. Significant progress has been achieved in the field-effect control of the carrier density of a superconducting cuprate using a FET device 9 and more recently using electric double layer (EDL) techniques.10 Electrostatic doping constitutes an alternative to chemical doping with the advantage of not introducing the disorder associated to element substitution. However, in FET devices there is an inherent class of disorder related to an unavoidable presence of an interface which may also deeply influence the doping process. The modulation of the charge density occurs within the Thomas-Fermi screening length, typically of the order of 1 nm. Electrostatic doping is an interfacial phenomenon, and may be influenced by the kinds of interface effects such as strain, charge transfer, polarity mismatch, etc. Moreover, the two-dimensional (2D) character of the cuprate makes its normal and superconducting states especially sensitive to disorder and localization effects ...

show abstract

Room temperature rectifying characteristics of epitaxial Y1Ba2Cu3−xZnxO7−δ (x=0.0,0.2) and Nb:SrTiO3 (Nb: 0.05%, 0.1%, 0.5%) heterojunctions

Cited by 15 publications

References 32 publications

Interface and defect structures in YBa₂Cu₃O_7−δand Nb : SrTiO₃heterojunction

Interface and defect structures in YBa₂Cu₃O_7−δand Nb : SrTiO₃heterojunction

Metallic oxide p-I-n junctions with ferroelectric as the barrier

Disorder-controlled superconductivity at YBa2Cu3O7/SrTiO
García‐Barriocanal
¹
,
Pérez-Muñoz
²
,
Sefrioui
³

et al. 2013
Phys. Rev. B

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Room temperature rectifying characteristics of epitaxial Y1Ba2Cu3−xZnxO7−δ (x=0.0,0.2) and Nb:SrTiO3 (Nb: 0.05%, 0.1%, 0.5%) heterojunctions

Cited by 15 publications

References 32 publications

Interface and defect structures in YBa2Cu3O7−δand Nb : SrTiO3heterojunction

Interface and defect structures in YBa2Cu3O7−δand Nb : SrTiO3heterojunction

Metallic oxide p-I-n junctions with ferroelectric as the barrier

Disorder-controlled superconductivity at YBa2Cu3O7/SrTiOGarcía‐Barriocanal1, Pérez-Muñoz2, Sefrioui3 et al. 2013Phys. Rev. B

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Interface and defect structures in YBa₂Cu₃O_7−δand Nb : SrTiO₃heterojunction

Interface and defect structures in YBa₂Cu₃O_7−δand Nb : SrTiO₃heterojunction

Disorder-controlled superconductivity at YBa2Cu3O7/SrTiO
García‐Barriocanal
¹
,
Pérez-Muñoz
²
,
Sefrioui
³

et al. 2013
Phys. Rev. B