Etching solutions for the determination of the crystallographic axes of ZnGeP2

Dhar, S.; Nag, B. R.

doi:10.1016/0022-0248(78)90376-7

Cited by 6 publications

(2 citation statements)

References 3 publications

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“…The six ZGP slices were etched by a solution of HF, HNO 3 , H 2 O, CH 3 COOH and I 2 (6 ml:6 ml:3 ml:3 ml:12 mg), which was proved to be very effective to produce etch pits on ZGP crystals by Refs. [24,28,29]. The etching process lasted for about ten minute at room temperature with ultrasonic vibration.…”

Section: Etch Pit Density (Epd)mentioning

confidence: 99%

Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method

Shen

2016

Journal of Crystal Growth

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Section: Etch Pit Density (Epd)mentioning

confidence: 99%

Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method

Shen

2016

Journal of Crystal Growth

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“…So these regular pits reveal much useful orientation information of crystals. Dhar and Nag [10] reported that HF, HNO 3 and I 2 mixture solution can etch some regular pits on polished ZnGeP 2 crystal. We found that the pits etched by this etching solution that is diluted by CH 3 COOH and cooled by ice water are much more clear and regular on nearly all ZnGeP 2 crystal faces.…”

Section: Introductionmentioning

confidence: 98%

Chemical etching orientation of ZnGeP2 single crystals

Cheng

Zhu

Zhao

et al. 2011

Journal of Crystal Growth

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Orientation dependence of electrical and optical properties of ZnSiP₂ crystals grown from melt

Siegel

Kühnel

Ziegler

et al. 1980

Cryst Res and Technol

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Dedicated to Professor G. BECHERER on the occasion of his 65th birthday Undoped and Ga-doped ZnXiP, crystals grown by spontaneous crystallization from nonstoichiometric melt show a pronounced dependence of electrical properties (conductivity, carrier concentration) and cathodoluminescence on the orientation of various crystal faces. Breakdown voltage meaurements and Hall measurements yielded that the (112)B face is always low-resistivity n-type and the (112)A face is always semi-insulating. The spectral position of the broad luminescence band observed a t 80 K differs in a characteristical manner for the various crystal faces. The luminescence behaviour correlates partly with the electrical properties. The results are explained by an orientation dependence of the impurity incorporation which is reflected also in the bulk properties of the crystals.Undotierte und Ga-dotierte ZnXiP,-Kristalle, die durch spontane Kristallisation aus einer niehtstochiometrischen Schmelze geziichtet wurden, zeigen eine ausgepriigte Abhiingigkeit der elektrischen Eigenschaften (Leitflihigkeit, Ladungstriigerkonzentration) und der Kathodolumineszenz von der Orientierung der verschiedenen Kristallfliichen. Durchbruchsspannungs-und Halleffektmessungen ergaben, dalS die (1 12)B-Fliiche stets niederohmig n-leitend und die (1 12)A-Fliiche stets halbisolierend ist. Die spektrale Lage der bei 80 K beobachteten breiten Lumineszenzbande unterscheidet sich deutlich fur die verschiedenen Kristallfliichen. Das Lumineszenzverhalten korreliert teilweise mit den elektrischen Eigenschaften. Die Ergebnisse werden durch Orientierungsabhiingigkeit des Storstelleneinbaus erkliirt, die sich auch im Kristallinneren iiul3ert.

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Etching solutions for the determination of the crystallographic axes of ZnGeP2

Cited by 6 publications

References 3 publications

Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method

Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method

Chemical etching orientation of ZnGeP2 single crystals

Orientation dependence of electrical and optical properties of ZnSiP₂ crystals grown from melt

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Etching solutions for the determination of the crystallographic axes of ZnGeP2

Cited by 6 publications

References 3 publications

Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method

Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method

Chemical etching orientation of ZnGeP2 single crystals

Orientation dependence of electrical and optical properties of ZnSiP2 crystals grown from melt

Contact Info

Product

Resources

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Orientation dependence of electrical and optical properties of ZnSiP₂ crystals grown from melt