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The controversy about the band gap of indium nitride is discussed. It is shown by considering the electron effective mass in different direct-gap II-VI and III-V semiconducting compounds that the controversy may be resolved by measuring the electron effective mass in indium antimonide samples showing a band gap of 0.7 eV.Davydov et al. [1] have presented experimental results on photoluminescence, excitation spectroscopy and infrared absorption, and concluded that the band gap of indium nitride is 0.7 eV. There have been a few other reports [2-4] confirming their finding. On the other hand, till these results were reported, all the experiments gave a value of 1.9-2

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The Thomas-Fermi model in the theory of systems of charged particles above the surface of liquid dielectrics J. Math. Phys. 53, 103302 (2012) Dielectric and structural properties of aqueous nonpolar solute mixtures J. Chem. Phys. 137, 124501 (2012) The thickness and stretch dependence of the electrical breakdown strength of an acrylic dielectric elastomer Appl. Phys. Lett. 101, 122905 (2012) Surface tension and phase coexistence for fluids of molecules with extended dipoles J. Chem. Phys. 137, 114708 (2012) Structure, magnetic, and dielectric characteristics of Ln2NiMnO6 (Ln=Nd and Sm) ceramics