Hot-Electron Transport

Nag, B. R.

doi:10.1007/978-3-642-81416-7_11

Cited by 74 publications

(123 citation statements)

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“…This cannot be firmly ruled out from the present data, but could be addressed by future experiments on suspended FET devices. Surface roughness scattering might also limit the mobility, and it is not clear from the literature what temperature dependence to expect, although there is some indication it should be weak [26]. From high-resolution TEM we estimate a typical roughness less than 2-3 monolayers for these nanowires.…”

Section: Discussionmentioning

confidence: 80%

“…Rather, this function provides a good model for our data and is based on the the following reasoning. For a fixed number of scatterers, the average mobility increases with temperature as T x , where x ∼ 1, since the carrier concentration increases with temperature leading to an increase in the Fermi velocity, which reduces the scattering probability [38,26]. On the other hand, an increase in the number of scatterers decreases mobility.…”

Section: Resultsmentioning

confidence: 99%

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Temperature-dependent electron mobility in InAs nanowires

et al. 2013

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Abstract. Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10 − 200 K. The mobility increases with temperature below ∼ 30 − 50 K, and then decreases with temperature above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from ionized surface states at typical densities. The behaviour above 50 K is ascribed to the thermally activated increase in the number of scatterers, although nanoscale confinement also plays a role as higher radial subbands are populated, leading to interband scattering and a shift of the carrier distribution closer to the surface. Scattering rate calculations using finite-element simulations of the nanowire transistor confirm that these mechanisms are able to explain the data.

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Section: Discussionmentioning

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Temperature-dependent electron mobility in InAs nanowires

et al. 2013

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“…The thermoelectric power factor is then derived from the calculated electrical conductivity and Seebeck coefficient using PF ¼ ra 2 T. Scattering from the ionized impurities and deformation potential of acoustic phonons were considered in the calculations. As it was previously reported, acoustic phonon scattering of charge carriers is the dominant scattering mechanism in SrTiO 3 above 700 K. 22 The momentum relaxation-time for the scattering from ionized impurities is given by Brooks-Herring formula, [23][24][25] …”

Section: Resultsmentioning

confidence: 99%

New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

Dehkordi

Bhattacharya

Darroudi

et al. 2015

Journal of Applied Physics

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Effect of Pr substitution on structural and dielectric properties of SrTiO3 J. Appl. Phys. 112, 044106 (2012) Recently, we have reported a significant enhancement in the electronic and thermoelectric properties of bulk polycrystalline SrTiO 3 ceramics via praseodymium doping. This improvement was originated from the simultaneous enhancement in the thermoelectric power factor and reduction in thermal conductivity, which was contributed to the non-uniform distribution of Pr dopants. In order to further understand the underlying mechanism, we herein investigate the role of praseodymium doping source (Pr 2 O 3 versus Pr 6 O 11 ) on the synthesis and electronic transport in Pr-doped SrTiO 3 ceramics. It was observed that the high-temperature electronic transport properties are independent of the choice of praseodymium doping source for samples prepared following our synthesis strategy. Theoretical calculations were also performed in order to estimate the maximum achievable power factor and the corresponding optimal carrier concentration. The result suggests the possibility of further improvement of the power factor. This study should shed some light on the superior electronic transport in bulk polycrystalline Pr-doped SrTiO 3 ceramics and provide new insight on further improvement of the thermoelectric power factor. V C 2015 AIP Publishing LLC.

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“…48 To study Seebeck coefficient more precisely, in particular to take into account the mobility term, we have followed the scheme proposed in the paper of Madsen and Singh, 49 i.e., we have performed the calculations using Boltzmann transport theory [50][51][52] and constant relaxation time approximation. 53 The latter approximation is based on an assumption that the scattering time determining the electrical conductivity does not vary strongly with energy. The advantage of using constant relaxation time is that the thermoelectric power can be directly calculated from the band structure as a function of carrier concentration and temperature, with no adjustable parameters.…”

Section: Summary and Discussionmentioning

confidence: 99%

Structural and electronic properties of Pb1−xCdxTe and Pb1
Bukała
¹
,
Sankowski
²
,
Buczko
³

et al. 2012
Phys. Rev. B
24
5
6
0
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A systematic theoretical study of two PbTe-based ternary alloys, Pb1−xCdxTe and Pb1−xMnxTe, is reported. First, using ab initio methods we study the stability of the crystal structure of CdTePbTe solid solutions, to predict the composition for which rock-salt structure of PbTe changes into zinc-blende structure of CdTe. The dependence of the lattice parameter on Cd (Mn) content x in the mixed crystals is studied by the same methods. The obtained decrease of the lattice constant with x agrees with what is observed in both alloys. The band structures of PbTe-based ternary compounds are calculated within a tight-binding approach. To describe correctly the constituent materials new tight-binding parameterizations for PbTe and MnTe bulk crystals as well as a tight-binding description of rock-salt CdTe are proposed. For both studied ternary alloys, the calculated band gap in the L point increases with x, in qualitative agreement with photoluminescence measurements in the infrared. The results show also that in p-type Pb1−xCdxTe and Pb1−xMnxTe mixed crystals an enhancement of thermoelectrical power can be expected.

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Hot-Electron Transport

Cited by 74 publications

References 0 publications

Temperature-dependent electron mobility in InAs nanowires

Temperature-dependent electron mobility in InAs nanowires

New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

Structural and electronic properties of Pb1−xCdxTe and Pb1
Bukała
¹
,
Sankowski
²
,
Buczko
³

et al. 2012
Phys. Rev. B
24
5
6
0
View full text Add to dashboard Cite

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Hot-Electron Transport

Cited by 74 publications

References 0 publications

Temperature-dependent electron mobility in InAs nanowires

Temperature-dependent electron mobility in InAs nanowires

New insights on the synthesis and electronic transport in bulk polycrystalline Pr-doped SrTiO3−δ

Structural and electronic properties of Pb1−xCdxTe and Pb1Bukała1, Sankowski2, Buczko3 et al. 2012Phys. Rev. B24560View full textAdd to dashboardCite

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Structural and electronic properties of Pb1−xCdxTe and Pb1
Bukała
¹
,
Sankowski
²
,
Buczko
³

et al. 2012
Phys. Rev. B
24
5
6
0
View full text Add to dashboard Cite