Sb 2 Te 3 and In 0.2 Sb 1.8 Te 3 : A comparative study of thermoelectric and related properties

Dhar, S.; Desai, C. F.

doi:10.1080/09500830210158792

Cited by 28 publications

(31 citation statements)

References 15 publications

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“…Another literature has also reported that the In atoms can substitute for Sb sites as a solid solution if the In content is less than 5 at%. 7,21,22) According to the results shown in Fig. 6(b), it shows a good agreement with the mentions that no indium compound is found.…”

Section: Electrical Properties Of Aist and St Filmssupporting

confidence: 77%

“…Previous study has reported that In atoms usually substitute for Sb sites in the lattice of the SbTe material. 7) Furthermore, the higher content of Ag element in the crystalline areas, as shown in Table 2 corresponds to the existence of AgSbTe 2 crystallites in the crystalline areas, which agrees with the identification from the diffraction pattern.…”

Section: Electrical Properties Of Aist and St Filmssupporting

confidence: 72%

“…This phenomenon can be explained by the reduction of the mobility of carriers after increasing the In concentration for In 2 Te 3 -Sb 2 Te 3 solid solution, which is because In atoms occupy the lattice position of Sb and concentration of antisite defects is reduced. 7,34) Concerning of the effect of Ag, the addition of Ag was reported to change the local bonding structure from amorphous to crystalline state, which results in a higher energy needed for crystallization. It means that the amorphous state will be thermally stabilized by the existence of Ag.…”

Section: Electrical Properties Of Aist and St Filmsmentioning

confidence: 99%

“…The structural change of as-deposited SbTe film caused by post-heat-treatment is investigated in terms of crystallization temperature and thus, activation energy in the present study. [6][7][8][9][10][11][12][13] Besides, previous studies have reported that SbTe films with Ag and In additives have a higher crystallization temperature and better stability than the SbTe binary system. 14) Hence, this study aims to investigate the electrical properties for both SbTe and AgInSbTe films in association with the microstructural characteristics before and after heat treatment.…”

Section: Introductionmentioning

confidence: 99%

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Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization

2007

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Two kinds of chalcogenide films with similar Sb/Te atomic ratios, AgInSbTe (AIST) and SbTe (ST) were deposited on alkali-free glass using the RF sputtering method. The microstructure characteristics of both ST and AIST films were demonstrated to correlate with the electrical properties. TEM observation and GI-XRD profiles revealed that the structures of as-deposited AIST and ST films were amorphous characteristics. The sheet resistance of the as-deposited AIST films was twice as high as that of ST films and the effect of Ag and In additives was proposed. After annealing at 523 K for 1 h, the sheet resistance of both chalcogenide films decreased by four orders of magnitude due to crystallizations and the sheet resistance of crystallized AIST film was still twice as large as that of crystallized ST film. DSC measurement was used to determine the crystallization temperature of AIST films as 476 K and that of ST films as 445 K. The activation energies of crystallization were determined using Kissinger's method, and 0.94 eV and 0.84 eV were obtained for AIST and ST films, respectively. TEM observations showed that AgSbTe 2 phase exists in the AIST film after heat treatment in addition to -Sb phase. No indium compounds were discovered in the AIST film by the energy dispersive spectroscopy (EDS) and XRD measurements.

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Section: Electrical Properties Of Aist and St Filmssupporting

confidence: 77%

Section: Electrical Properties Of Aist and St Filmssupporting

confidence: 72%

Section: Electrical Properties Of Aist and St Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization

2007

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“…The first is prepared through unidirectional solidification techniques, such as the zone melting, Czochralski or Bridgman methods. [1][2][3][4][5] However, such materials prepared possess poor mechanical properties since they are prone to fracture along the cleavage planes of their own crystalline structure. To eliminate this weakness, other types of materials have been studied and reported on in recent years, namely those prepared by sintering or hot-pressing a pulverized ingot into a solid form.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Thermoelectric Properties of Hot-Pressed p-Type Bi0.5Sb1.5Te3 Alloys Prepared by Rapid Solidification Technique

2004

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Rapidly solidified bismuth-telluride based alloy foil; fabricated using the single roller melt spinning method exhibits a fine microstructure with unidirectional crystals. Meanwhile, a hot-pressing process, using rapidly solidified foils, was used to prepare the consolidated samples. The fine microstructure of this alloy is extremely effective in decreasing thermal conductivity because of the grain boundary scattering of the phonons, a key factor improving the thermoelectric properties of thermoelectric materials. Hot-pressed samples using these rapidly solidified foils display lower thermal conductivity values than the alloys made by the conventional hot-consolidating method using pulverized ingot powder. In this case, thermoelectric properties were investigated comparatively in terms of hot-pressed rapidly solidified foil specimens and pulverized powders of these foils under 53 mm in size, evaluating the dependence of the hot-pressing temperature and consequent pressure on the thermoelectric properties of these specimens. The maximum figure of merit (Z) obtained was 3:34 Â 10 À3 K À1 .

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Enhancement of thermoelectric efficiency in vapor deposited Sb₂Te₃ and Sb_1.8In_0.2Te₃ crystals

Thankamma

Kunjomana

2014

Crystal Research and Technology

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Pure and indium doped antimony telluride (Sb 2 Te 3 ) crystals find applications in high performance room temperature thermoelectric devices. Owing to the meagre physical properties exhibited on the cleavage faces of melt grown samples, an attempt was made to explore the thermoelectric parameters of p-type crystals grown by the physical vapor deposition (PVD) method. The crystal structure of the grown platelets (9 mm× 8 mm× 2 mm) was identified as rhombohedral by x-ray powder diffraction method. The energy dispersive analysis confirmed the elemental composition of the crystals. The electron microscopic and scanning probe image studies revealed that the crystals were grown by layer growth mechanism with low surface roughness. At room temperature (300 K), the values of Seebeck coefficient S ( c) and power factor were observed to be higher for Sb 1.8 In 0.2 Te 3 crystals (155 μVK −1 , 2.669 × 10 −3 W/mK 2 ) than those of pure ones. Upon doping, the thermal conductivity κ ( c) was decreased by 37.14% and thus thermoelectric efficiency was improved. The increased figure of merit, Z = 1.23 × 10 −3 K −1 for vapour grown Sb 1.8 In 0.2 Te 3 platelets indicates that it could be used as a potential thermoelectric candidate.

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Sb 2 Te 3 and In 0.2 Sb 1.8 Te 3 : A comparative study of thermoelectric and related properties

Cited by 28 publications

References 15 publications

Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization

Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization

Microstructure and Thermoelectric Properties of Hot-Pressed p-Type Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> Alloys Prepared by Rapid Solidification Technique

Enhancement of thermoelectric efficiency in vapor deposited Sb₂Te₃ and Sb_1.8In_0.2Te₃ crystals

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Sb 2 Te 3 and In 0.2 Sb 1.8 Te 3 : A comparative study of thermoelectric and related properties

Cited by 28 publications

References 15 publications

Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization

Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization

Microstructure and Thermoelectric Properties of Hot-Pressed p-Type Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> Alloys Prepared by Rapid Solidification Technique

Enhancement of thermoelectric efficiency in vapor deposited Sb2Te3 and Sb1.8In0.2Te3 crystals

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Enhancement of thermoelectric efficiency in vapor deposited Sb₂Te₃ and Sb_1.8In_0.2Te₃ crystals