Effect of heat treatments on the properties of hydrogenated amorphous silicon for PV and PVT applications

Frigeri, C.; Serényi, Miklós; Szekrényes, Zsolt; Csík, A.

doi:10.1016/j.solener.2015.07.004

Cited by 10 publications

(9 citation statements)

References 47 publications

(116 reference statements)

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“…It has been widely demonstrated that in amorphous Ge, Si and SiGe [7,8,15,18], as well as in other materials [19], the reason for the formation of blisters is the increase of the volume of voids containing molecular H 2 until they pop up and deform the surface. In as-grown hydrogenated a-Si x Ge 1-x , 0 ≤ x ≤1, H is mostly bound to the host atoms Si and Ge.…”

Section: Discussionmentioning

confidence: 99%

“…The accumulation on the wall of voids causes the evolution of hydrogen bubbles and then the formation of blisters. Some efforts have been made to understand the microscopic mechanisms determining the rupture of the MeH bonds and formation of H 2 rich voids at the origin of the blisters [6][7][8] in order to get rid of them. For this purpose a method was recently proposed for a-Si:H which is based on the optimization of the shape, size and thickness of the layer [9] .…”

Section: Introductionmentioning

confidence: 99%

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Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films

et al. 2019

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The preparation of blister free layers of hydrogenated a-Si x Ge 1-x (0≤ x ≤1) is a primary requisite for their technological applications. In RF (Radio Frequency) sputtered layers the formation of blisters is temperature dependent, as also shown here. This dependence is used to propose a theoretical model aimed at a better understanding of the mechanisms determining the blistering.Beside the reaction kinetics responsible for the release of H atoms from SiH and/or GeH complexes the model takes into particular account the contribution of the diffusion of H. The activation energy for blistering also enters in the model. The validation of the theoretical frame of the model is confirmed by the fact that it predicts a blistering threshold temperature in reasonable agreement with the experiment. The amorphous hydrogenated thin layers were deposited on polished silicon by RF co-sputtering. They were annealed between 150 and 350 °C. The

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films

et al. 2019

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“…The degradation of the surface quality of several types of material is often due to the formation of blisters [1][2][3][4][5][6]. Blistering is caused by voids inside the material which have reached a sufficient size to touch and deform the surface because of the increased pressure of some gas inside the voids [1][2][3][4][5][6][7][8]. In the worst cases blisters burst leaving craters [1,6,[8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…It is introduced into the material in different ways, e.g. by implantation [1,2,[10][11][12][13][14][15], mixed or in compounds with other gases employed to grow a given material in a plasma regime in the case of H [6,16,17]. Hydrogen and He are hardly soluble in most materials with the consequence that they tend to segregate into voids that grow and coalesce upon annealing with an ensuing increase of the gas pressure [14].…”

Section: Introductionmentioning

confidence: 99%

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Serényi

Frigeri²,

Schiller

2018

Journal of Alloys and Compounds

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Surface quality is a key issue in semiconductor structures for device applications. Typical surface defects are blisters. Here we investigate on the relationship between the activation energy of blistering and the composition x in hydrogenated amorphous a-Si x Ge 1-x by employing layers deposited by Radio Frequency sputtering. To this aim the blistering activation energy was determined by means of Arrhenius plots in several samples with different compositions, including x=0 and x=1. Each sample was submitted to heat treatment up to the temperature where the onset of blistering was observed by change of the surface reflectivity. It is found that a linear dependence of the activation energy on x similar to the Vegard's law holds. The experimental result is supported by reaction kinetics modeling. It is suggested that the key step for the formation of blisters is the scission of the SiH and GeH bonds. The related energetic reaction leading to the formation of H 2 molecules in a-Si x Ge 1-x follows a linear law as a function of the x composition similarly to the activation energy.

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“…As mentioned before, a-Si;H has garnered attention in the PVT research efforts as another commercially viable photovoltaic source, as the high operation heat and low α values associated with a-Si:H allows it to heat the working fluid to a higher temperature above Ta and work as a more symbiotic hybrid system. [5,13,14] …”

Section: Thermal Parameters To Addressmentioning

confidence: 99%

Optimisation Principles for Photovoltaic/Thermal Hybrid Solar Systems, a Meta Study

Shin

Salcedo

Wang

2018

PAMR

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Photovoltaic/Thermal hybrid (PVT) systems have shown promise as a viable commercial and private source of renewable energy. The purpose of this meta study is to combine contemporary research findings in the area of Photovoltaic (PV) and Photovoltaic/Thermal Hybrid solar systems and attempt to offer general optimisation principles for future PVT devices. Design parameters with which we attempt to optimise through will include PV material choice, CPC inclusion and system temperature optimisation for operational lifetime gain and power yield. It was found that we can combine CPC, closed glass design, spiral web flow and m>0.003kg/s to optimise the c-SI based systems and obtain an overall PVT efficiency gain of 5.5±1.6%, and that mass flow rates exceeding 0.003 kg/s can increase longevity by 80% on average and increase electrical efficiency by 1.2% when compared to conservative lower mass flow rates. Hydrogenated amorphous silicon systems were also deemed to create less high-quality energy and overshooting required thermal needs when using personal/private power statistics as selection criteria.

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Effect of heat treatments on the properties of hydrogenated amorphous silicon for PV and PVT applications

Cited by 10 publications

References 47 publications

Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films

Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Optimisation Principles for Photovoltaic/Thermal Hybrid Solar Systems, a Meta Study

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Effect of heat treatments on the properties of hydrogenated amorphous silicon for PV and PVT applications

Cited by 10 publications

References 47 publications

Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films

Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Optimisation Principles for Photovoltaic/Thermal Hybrid Solar Systems, a Meta Study

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Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films

Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films