Effect of high-energy electron beam irradiation on the surface morphology of CaF2/Si(100) heterostructures

Velichko, A. A.; Ilyushin, V. A.; Ostertak, Dmitriy I.; Peisakhovich, Yu. G.; Filimonova, N. I.

doi:10.1134/s1027451007040209

Cited by 10 publications

(2 citation statements)

References 7 publications

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“…Understanding the surface properties and surface reactivity of materials with the fluorite-type structure, such as UO 2 , ThO 2 , and PuO 2 , is important for the nuclear energy sector. − One reason for this is the need to understand long-term dissolution and alteration of spent nuclear fuel (SNF) in the environment . Other materials with the fluorite structure, CaF 2 and CeO 2 , are important materials in other technological and industrial areas. − CaF 2 is the most important source material for hydrofluoric acid, and because of its large band gap it is also particularly important as an ultraviolet optical material for integrated circuit lithography, being used as well to produce a semiconductor on insulator structures . CeO 2 is used as an oxygen buffer in the automobile catalysis industry, ,,, as an important component in many technological devices, as an oxygen gas sensor, or in fuel cells …”

Section: Introductionmentioning

confidence: 99%

Ab Initio Prediction of Surface Stability of Fluorite Materials and Experimental Verification

et al. 2013

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Utilizing first-principle simulations [based on density functional theory (DFT) corrected for on-site Coulomb interactions (DFT+U)], we develop a model to explain the experimental stability in solution of materials having the fluorite structure, such as CaF 2 and CeO 2 . It is shown that the stability of a surface is mainly dependent on its atomic structure and the presence of sites where atoms are deficiently bonded. Using as reference planes the surfaces with low surface formation energies, viz., (111), (100), and (110), our results reveal the relation between the surface energy of any Miller-indexed plane and the surface energy of those reference planes, being dependent on the fluorite surface structure only. Therefore, they follow the same trend for CaF 2 and CeO 2 . Comparison with experimental results shows a correlation between the trends of dry surface energies and surface stabilities during dissolution of both CaF 2 and CeO 2 , even though the chemical processes of dissolution of CeO 2 and CaF 2 are different. A deviation between ab initio predictions and experiments for some surfaces highlights the sensitivity of the developed model to the treatment of surface dipolar moments.

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Section: Introductionmentioning

confidence: 99%

Ab Initio Prediction of Surface Stability of Fluorite Materials and Experimental Verification

et al. 2013

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“…More recently, the study of the formation of CaF 2 structures on Si(100) surfaces has come to prominence. [7][8][9][10][11] While for the Si(111) surface, the formation of isotropic CaF 2 islands is readily achieved, the Si(100) surface offers the possibility for growth of long fluorite stripes with good electronic insulating properties. 11 In both cases, investigations of these substrates have shown the crucial importance of a deep understanding of the growth processes in order to achieve their control and develop new applications at the nanoscale.…”

Section: Introductionmentioning

confidence: 99%

Atomic-scale study of the adsorption of calcium fluoride on Si(100) at low-coverage regime

et al. 2011

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All material supplied via Aaltodoc is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not be offered, whether for sale or otherwise to anyone who is not an authorised user. We investigate, experimentally and theoretically, the initial stage of the formation of Ca/Si and Si/F structures that occurs during the adsorption of CaF 2 molecules onto a bare Si(100) surface heated to 1000 K in a low-coverage regime (0.3 monolayer). A low-temperature (5 K) scanning tunneling microscope (STM) is used to observe the topographies and the electronic properties of the exposed silicon surfaces. Our atomic-scale study reveals that several chemical reactions arise during CaF 2 deposition, such as dissociation of the CaF 2 molecules and etching of the surface silicon dimers. The experimental and calculated STM topographies are compared using the density functional theory, and this comparison enables us to identify two types of reacted structures on the Si(100) surface. The first type of observed complex surface structure consists of large islands formed with a semiperiodic sequence of 3 × 2 unit cells. The second one is made of isolated Ca adatoms adsorbed at specific sites on the Si(100)-2 × 1 surface.

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Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si

et al. 2020

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Effect of high-energy electron beam irradiation on the surface morphology of CaF2/Si(100) heterostructures

Cited by 10 publications

References 7 publications

Ab Initio Prediction of Surface Stability of Fluorite Materials and Experimental Verification

Ab Initio Prediction of Surface Stability of Fluorite Materials and Experimental Verification

Atomic-scale study of the adsorption of calcium fluoride on Si(100) at low-coverage regime

Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si

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