Effect of High-Pressure Oxygen Annealing on Bi2SiO5-Added Ferroelectric Thin Films

Kijima, Takeshi; Kawashima, Yoshihito; Idemoto, Yasushi; Ishiwara, Hiroshi

doi:10.1143/jjap.41.l1164

Cited by 30 publications

(14 citation statements)

References 5 publications

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“…Ferroelectric SBT has advantages of a lower switching field and a lower leakage current in the form of ultrathin films [24,51,67]. However, the integration of SBT films into high-density memories is confronted with some problems, one being that the capacitors constructed to data suffer from low remanent polarization (P r ).…”

Section: ¼ 2: Srbi 2 Ta 2 O 9 -Based Single Crystalsmentioning

confidence: 99%

Defect Control and Properties in Bismuth Layer Structured Ferroelectric Single Crystals

Noguchi

Miyayama

2011

Lead-Free Piezoelectrics

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The static and dynamic behaviors of ferroelectric domains are the underlying basis of various functional properties of ferroelectric materials, such as dielectricity, piezoelectricity, ferroelectricity, and electro-optic and acoustic-optic effects. Since the performance of ferroelectric devices is governed by these behaviors, various techniques for enhancing device performance have been widely investigated with the aim of controlling ferroelectric domains [19,20,88,109]. Such control, however, is often prevented not only by a large leakage current but also by undesirable behaviors such as domain clamping [16,73,95], fatigue [17,98], aging [63,68], imprinting [110], and depoling [98]. Ferroelectric devices thus suffer from degraded polarization and poor reliability due to insufficient control over ferroelectric domains. It is considered that the poor polarization properties, fatigue, and aging, etc. are governed by the interaction between defects and ferroelectric domains.Bismuth layer-structured ferroelectrics (BLSFs) have attracted much attention because of their high Curie temperature (T C ) and larger spontaneous polarization (P s ). The relation between crystal structure and ferroelectric properties of BLSFs has been widely investigated because of their anisotropy of ferroelectric polarization [10,22,113]. In the crystal structure of BLSFs, perovskite layers (A mÀ1 B m O 3m+1 ) are sandwiched between Bi 2 O 2 layers, where m is the number of BO 6 octahedral layers with A-site cations in the perovskite layers, as shown in Fig. 14

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Section: ¼ 2: Srbi 2 Ta 2 O 9 -Based Single Crystalsmentioning

confidence: 99%

Defect Control and Properties in Bismuth Layer Structured Ferroelectric Single Crystals

Noguchi

Miyayama

2011

Lead-Free Piezoelectrics

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“…In addition, it was also reported that Bi 2 SiO 5 -addition in the preparation processes was effective for an improvement of fatigue characteristics in the case of Bi-layered ferroelectric films [2]. Recently, we focused on such previous works, and demonstrated that ferroelectric properties of Bi 4 À x Ln x Ti 3 O 12 (Ln¼La, Pr and Nd) bulks were significantly improved by adding Bi 2 SiO 5 or Bi 4 Si 3 O 12 [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 97%

Crystal structure and ferroelectric property of Bi4Si3O12-added Bi4−xSmxTi3O12

Idemoto

Ito

Kitamura

et al. 2012

Journal of Physics and Chemistry of Solids

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“…Bismuth layer-structured ferroelectrics Bi 4 Ti 3 0 12 (BIT) thin film is expected for application to nonvolatile ferroelectric random access memory (NV -Fe RAM) devices with nondestructive readout operation due to its excellent fatigue endurance when in the deposition of this film with Pt electrode [1][2][3]. In recent years, preparation of BIT thin film has been investigated by several deposition techniques such as sol-gel [ 4,5] , metalorganic decomposition (MOD) [6,7], metalorganic chemical vapor deposition (MOCVD) [8][9][10][11][12][13][14] , and RF magnetron sputtering [I 5-2 I]. From the point of view of commercial production using sol-gel, MOD, and MOCVD methods, there are still some severe difficulties, for instance poor throughput (low deposition rate), high-temperature deposition, compositional nonuniformity across large substrate, rough surface morphology, lack of appropriate precursors in the gas phase, and poor reproducibility.…”

Section: Introductionmentioning

confidence: 99%

Structural and Ferroelectric Properties of Bi4Ti3O12/TiO2 Thin Films Prepared by Two-Dimensional RF Magnetron Sputtering

Masaya¹,

Inada²,

Higuchi³

et al. 2007

Trans. Mat. Res. Soc. Japan

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The Bi 4 Ti 3 0 12 (BIT) thin films with Ti0 2 layer were prepared on Pt/Ti/S i0 2 /Si substrates by two-dimensional RF magnetron sputtering using Ti0 2 and Bi 2 0 3 targets. In order to prevent the interdifussion of BIT thin film, we inserted the Ti0 2 layer between BIT thin film and Pt electrode. The BIT thin film with Ti0 2 layer consists of small grain with a diameter of 80 nm. The orientation of BIT thin film depends on the fi lm thickness ofTi0 2 layer. When the thickness of Ti0 2 layer is I 0 nm, the postannealed BIT thin film exhibited a good P-E hysteresis loop. The leakage current (IL) at voltage of I 0 V was 10• 6 A/cm 2 , although the IL of BIT thin fi lm with no layer was 10• 5 A/cm 2 .

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Effect of High-Pressure Oxygen Annealing on Bi2SiO5-Added Ferroelectric Thin Films

Cited by 30 publications

References 5 publications

Defect Control and Properties in Bismuth Layer Structured Ferroelectric Single Crystals

Defect Control and Properties in Bismuth Layer Structured Ferroelectric Single Crystals

Crystal structure and ferroelectric property of Bi4Si3O12-added Bi4−xSmxTi3O12

Structural and Ferroelectric Properties of Bi4Ti3O12/TiO2 Thin Films Prepared by Two-Dimensional RF Magnetron Sputtering

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